Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access Memory

2018 ◽  
Author(s):  
Jae Yoon Lee ◽  
Youngmin Kim ◽  
Ikhyeon Kworn ◽  
Il Hwan Cho ◽  
Jae Yeon Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Fabrication And Characterization

Fabrication and characterization of a crosstie random access memory

1982 ◽  
Vol 18 (6) ◽  
pp. 1782-1784 ◽  
Author(s):  
C. Baugh ◽  
J. Cullom ◽  
E. Hubbard ◽  
M. Mentzer ◽  
R. Fedorak
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Fabrication And Characterization

Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88166-88170 ◽  
Author(s):  
Wei-Kang Hsieh ◽  
Ricky W. Chuang ◽  
Shoou-Jinn Chang
Keyword(s):  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Fabrication And Characterization ◽  
Switching Memory

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature.

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

2014 ◽  
Vol 35 (6) ◽  
pp. 630-632 ◽  
Author(s):  
Rui Zhang ◽  
Tai-Fa Young ◽  
Min-Chen Chen ◽  
Hsin-Lu Chen ◽  
Shu-Ping Liang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Transistor-level characterization of static random access memory bit failures induced by random telegraph noise

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED05 ◽  
Author(s):  
Tomoko Mizutani ◽  
Takuya Saraya ◽  
Kiyoshi Takeuchi ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

scholarly journals Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors

2020 ◽  
Vol 26 (S2) ◽  
pp. 1404-1405
Author(s):  
Sahar Hihath ◽  
Hannah Harter ◽  
Jerry Fortier ◽  
David Flowers
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

1991 ◽  
Vol 138 (7) ◽  
pp. 2052-2057 ◽  
Author(s):  
P. C. Fazan ◽  
A. Ditali ◽  
C. H. Dennison ◽  
H. E. Rhodes ◽  
H. C. Chan ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Composite Oxide
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