Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88166-88170 ◽  
Author(s):  
Wei-Kang Hsieh ◽  
Ricky W. Chuang ◽  
Shoou-Jinn Chang
Keyword(s):  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Fabrication And Characterization ◽  
Switching Memory

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature.

scholarly journals Dynamic conductance characteristics in HfOx-based resistive random access memory

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12984-12989 ◽  
Author(s):  
Ying-Chen Chen ◽  
Yao-Feng Chang ◽  
Xiaohan Wu ◽  
Fei Zhou ◽  
Meiqi Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Dynamic Conductance ◽  
Switching Memory

Schematic of RESET analysis by dynamic conductance of I–V curve in HfOx-based resistive switching memory.

Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

RSC Advances ◽  
2014 ◽  
Vol 4 (38) ◽  
pp. 20017-20023 ◽  
Author(s):  
Hyeon Gyun Yoo ◽  
Seungjun Kim ◽  
Keon Jae Lee
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Plastic Substrates ◽  
Resistive Switching Memory ◽  
Change Material ◽  
Switching Memory

Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

Conjugated Polymer with On-Chain Pt(II) Complex for Resistive Random-Access Memory Device

2012 ◽  
Vol 213 (23) ◽  
pp. 2472-2478 ◽  
Author(s):  
Wenpeng Lin ◽  
Huibin Sun ◽  
Shujuan Liu ◽  
Huiran Yang ◽  
Shanghui Ye ◽  
...  
Keyword(s):  
Conjugated Polymer ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Access Memory

The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

2014 ◽  
Vol 1691 ◽  
Author(s):  
Ryosuke Ogata ◽  
Masataka Yoshihara ◽  
Naohiro Murayama ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Grain Boundary ◽  
Room Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Influence Of Water ◽  
Retention Characteristics ◽  
Memory Characteristics

ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated. As a result, switching voltages were decreased by supplying water and reset switching was confirmed to be strongly induced by supplying water even at room temperature without applying voltage. These results suggest that water enhances resistive switching effect by providing reducing species and oxidizing species respectively such as H+ and OH-.

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

2013 ◽  
Vol 1562 ◽  
Author(s):  
Tong Liu ◽  
Yuhong Kang ◽  
Sarah El-Helw ◽  
Tanmay Potnis ◽  
Marius Orlowski
Keyword(s):  
Growth Rate ◽  
Radial Growth ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Conductive Bridge ◽  
Geometrical Form ◽  
Switching Memory

ABSTRACTA phenomenological model has been proposed for the radial growth of the copper or silver nanobridge in the conductive bridge random access memory devices. In this model, the growth rate of the bridge is proportional to the local ion flux based on the hopping mechanism. Due to the differences of the local electric field, the growth rate is different along a conical shape nanobridge. The model accounts for the growth rate difference by introducing a geometrical form factor. Based on the model, the top and bottom radii are predicted for truncated conical copper nanobridge. The model is validated with data obtained on Cu/TaOx/Pt resistive devices.

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