Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have
been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage
characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium
carriers in the base of the diodes steadily increases with temperature across the entire temperature
interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing
temperature nearly compensate each other as regards their effect on the differential resistance of the
diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the
base resistance takes place at room temperature even at a relatively small current density j of 20
A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed.
The bulk reverse current is governed by carrier generation in the space-charge region via a trap with
activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed
2×10-6 А at T = 773 K and a reverse bias of 300 V.