Regional single domain structure of Mg-doped near stoichiometric LiNbO3 crystal

2004 ◽  
Vol 132 (3-4) ◽  
pp. 285-288 ◽  
Author(s):  
Hai-Li Wang ◽  
Yin Hang ◽  
Jun Xu ◽  
Lian-Han Zhang ◽  
Cheng-Feng Yan ◽  
...  
2004 ◽  
Vol 262 (1-4) ◽  
pp. 313-316 ◽  
Author(s):  
Haili Wang ◽  
Yin Hang ◽  
Lianhan Zhang ◽  
Jun Xu ◽  
Mingzhu He ◽  
...  

2010 ◽  
Vol 663-665 ◽  
pp. 1133-1136
Author(s):  
Xin Hua Li ◽  
Jia Yue Xu ◽  
Min Jin ◽  
Hui Shen ◽  
Bao Liang Lu ◽  
...  

LiNbO3 (Mg:LN) crystal is an important electro-optical material and MgO-doped LiNbO3 was expected to improve its optical damage resistance. In the present work, we reported the Bridgman growth of MgO-doped LiNbO3 crystal. The growth parameters were discussed and the defects were investigated by the chemical etching method. The etch hillocks and etch pits were observed on the negative Z surface while only etch pits on the positive Z surface by the optical microscope and EPMA. The etching morphology was discussed considering the domain structure.


2016 ◽  
Author(s):  
Longhuang Tang ◽  
Yuye Wang ◽  
Degang Xu ◽  
Zhen Yang ◽  
Chao Yan ◽  
...  

2004 ◽  
Vol 58 (25) ◽  
pp. 3119-3121 ◽  
Author(s):  
Hai-Li Wang ◽  
Yin Hang ◽  
Jun Xu ◽  
Lian-Han Zhang ◽  
Shi-Ning Zhu ◽  
...  

Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.


2013 ◽  
Vol 103 (14) ◽  
pp. 142413 ◽  
Author(s):  
J. J. Wang ◽  
Jia-Mian Hu ◽  
Long-Qing Chen ◽  
Ce-Wen Nan

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