Growth and Etching Studies of MgO-Doped LiNbO3 Single Crystal

2010 ◽  
Vol 663-665 ◽  
pp. 1133-1136
Author(s):  
Xin Hua Li ◽  
Jia Yue Xu ◽  
Min Jin ◽  
Hui Shen ◽  
Bao Liang Lu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Domain Structure ◽  
Chemical Etching ◽  
Growth Parameters ◽  
Optical Microscope ◽  
Optical Material ◽  
Bridgman Growth ◽  
Linbo3 Crystal ◽  
Etch Pits ◽  
Damage Resistance

LiNbO3 (Mg:LN) crystal is an important electro-optical material and MgO-doped LiNbO3 was expected to improve its optical damage resistance. In the present work, we reported the Bridgman growth of MgO-doped LiNbO3 crystal. The growth parameters were discussed and the defects were investigated by the chemical etching method. The etch hillocks and etch pits were observed on the negative Z surface while only etch pits on the positive Z surface by the optical microscope and EPMA. The etching morphology was discussed considering the domain structure.

Faceting of Single-Crystal SrTiO3 During Wet Chemical Etching

1999 ◽  
Vol 587 ◽  
Author(s):  
G. C. Spalding ◽  
W. L. Murphy ◽  
T. M. Davidsmeier ◽  
J. E. Elenewski
Keyword(s):  
Single Crystal ◽  
Chemical Etching ◽  
Surface Defects ◽  
Macroscopic Model ◽  
Heteroepitaxial Growth ◽  
Substrate Preparation ◽  
Etch Pits ◽  
Atomic Force ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractWe use an Atomic Force Microscope (AFM) to study changes in the surface of single-crystal SrTiO3 etched in HF-based solutions. Attention in this work has been focused upon observations of pyramidal pitting – both because of an interest in avoiding etch pits during substrate preparation prior to heteroepitaxial growth, and because of an interest in micromachining this highly polarizable material. We note that (110) SrTiO3 is surprisingly robust against the formation of pits, while pitting is significant on {100} surfaces. Particular etch rates have been measured, and we discuss anisotropies in the rates of dissolution. These data are combined to extract a macroscopic model describing processes relevant to the most extreme pitting, which we show to be associated with surface defects.

Polar-Twinned Defects in LiGaO2 Substrates Lattice Matched with GaN

1997 ◽  
Vol 468 ◽  
Author(s):  
Takao Ishii ◽  
Yasuo Tazoh ◽  
Shintaro Miyazawa
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Domain Structure ◽  
Chemical Stability ◽  
Chemical Etching ◽  
Czochralski Growth ◽  
Polarity Inversion ◽  
Lattice Matched

ABSTRACTWe investigated the Czochralski growth of LiGaO2 single crystal for use as a substrates for the epitaxial growth of hexagonal GaN. Crossed lines were observed in mechano-chemically polished {001} wafers sliced from a (001) axis boule. Chemical etching revealed that there exists a difference in chemical stability between two domains separated by a crossed line. Since LiGaO2 single crystal is polar along the c-axis, the formation of multi-domain structure is due to the polarity inversion of the c-axis, that is, polar twinned defects. We found that the GaN thin film on the (001) substrate with a multi-domain structure peeled off and that this is closely related with multi-polarity of substrate.

Chemical Etching of Dislocations Process on Sapphire

2012 ◽  
Vol 571 ◽  
pp. 143-146 ◽  
Author(s):  
Xin Jian Xie ◽  
Qiu Yan Hao ◽  
Li Min Liang ◽  
Yin Ying Li ◽  
Cai Chi Liu
Keyword(s):  
Atomic Force Microscopy ◽  
Optimal Condition ◽  
Chemical Etching ◽  
Optical Microscope ◽  
Etch Pits ◽  
Fixed Temperature ◽  
Sapphire Surface ◽  
Force Microscopy ◽  
Atomic Force

In this work, the preferential chemical etching of dislocations on (0001) sapphire surface was investigated. The sapphire was etched by fused KOH etchant at fixed temperature for different time. The differences in the morphology of the etch pits on c-plane sapphire were observed by the optical microscope and atomic force microscopy. The results show that the optimal condition for dislocation displaying was etching 15 min or 25 min with fused KOH at 290 °C.The morphologies of the etch pits were changed from the triangle to the polygon and three kinds of increscent mechanisms about the etch pits are put forward and discussed in the paper.

Growth and Defects of Magneto-Optical YFeO3 Single Crystal

2010 ◽  
Vol 663-665 ◽  
pp. 580-583
Author(s):  
Hui Shen ◽  
Jia Yue Xu ◽  
An Hua Wu ◽  
Min Jin ◽  
Guo Jian Jiang
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Formation Mechanism ◽  
Optical Microscope ◽  
Optical Material ◽  
Polished Surface ◽  
Floating Zone ◽  
Zone Method ◽  
Floating Zone Method ◽  
Etch Patterns

YFeO3 single crystal, as a novel magneto-optical material, has attracted much attention due to its remarkable properties of primary significance for technological applications. In this work, YFeO3 crystal was successfully grown by optical floating zone method. Some voids are observed in the polished surface. The voids are effectively decreased by denser feed rod. In the etching samples, hexagonal etch patterns, sub-grain boundary and concentric growth striations were observed by optical microscope and SEM. The formation mechanism of these defects was discussed, and effective measures to restrain these defects were also proposed.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

DOMAIN STRUCTURE VARIATION WITH THICKNESS OF Nd2Fe14B SINGLE CRYSTAL

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-589-C8-590
Author(s):  
Y. Luo ◽  
Q. G. Ji ◽  
N. Zhang ◽  
B. S. Han
Keyword(s):  
Single Crystal ◽  
Domain Structure ◽  
Structure Variation

The effect of etchants on surface of CdTe single crystal

2016 ◽  
Vol 12 (1) ◽  
pp. 4145-4147
Author(s):  
S. Javad Mousavi
Keyword(s):  
Single Crystal ◽  
Cadmium Telluride ◽  
Etch Pits ◽  
Cdte Single Crystal ◽  
Sublimation Method ◽  
Crystallographic Defect

Cadmium telluride crystals (CdTe) have been grown by the sublimation method. The crystal polarity of the CdTe with the zincblend structure has been studied. Two different crystallographic defect and etch pits are revealed on the (111) Cd and  Te surfaces by different etchant.

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