Thermal and spectral analysis of self-heating effects in high-power LEDs

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

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Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078709990444 ◽

2009 ◽

Vol 1 (2) ◽

pp. 153-160 ◽

Cited By ~ 7

Author(s):

Jan Kuzmik ◽

Sergey Bychikhin ◽

Emmanuelle Pichonat ◽

Christophe Gaquière ◽

Erwan Morvan ◽

...

Keyword(s):

High Power ◽

Transient State ◽

Thermal Characterization ◽

Heating Time ◽

Heat Propagation ◽

Electrical Method ◽

Characterization Methods ◽

Self Heating ◽

Heating Effects ◽

Eu Project

In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient interferometric mapping (TIM), provides a fundamental understanding of the heat propagation in a transient state of HEMTs. The AlGaN/GaN/Si HEMT thermal resistance was determined to be ~70 K/W after 400 ns from the start of a pulse, and the heating time constant was ~200 ns. Our experimental methods were further applied on multifinger high-power AlGaN/GaN/sapphire HEMTs. The TIM method indicates that the airbridge structure serves as a cooler, removing approximately 10% of the heat energy. In the next study we used TIM and the micro-Raman technique to quantify thermal boundary resistance (TBR) between different wafer materials and GaN epi-structure. We found TBR to be ~7 × 10−8 m2K/W for GaN/Si and ~1.2 × 10−7 m2K/W for GaN/SiC interfaces. The role of TBR at the GaN/sapphire interface was found to be less important.

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Self-heating effects of GaN FETs for high power microwave applications

2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567) ◽

10.1109/edmo.2001.974294 ◽

2002 ◽

Cited By ~ 1

Author(s):

C.K. Tam ◽

K.L. Koon ◽

Z.R. Hu ◽

A. Rezazadeh

Keyword(s):

High Power ◽

High Power Microwave ◽

Self Heating ◽

Heating Effects ◽

Microwave Applications ◽

Power Microwave

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Self-heating effects in AlGaN/GaN high-power HEMTs

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226850 ◽

2004 ◽

Cited By ~ 4

Author(s):

A.P. Zhang ◽

L.B. Rowland ◽

E.B. Kaminsky ◽

V. Tilak ◽

A.F. Allen ◽

...

Keyword(s):

High Power ◽

Self Heating ◽

Heating Effects

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High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects

Semiconductors ◽

10.1134/s1063782619040183 ◽

2019 ◽

Vol 53 (4) ◽

pp. 519-523 ◽

Cited By ~ 1

Author(s):

A. S. Kyuregyan

Keyword(s):

High Voltage ◽

High Power ◽

Self Heating ◽

Heating Effects ◽

Silicon Structures

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GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078710000085 ◽

2010 ◽

Vol 2 (1) ◽

pp. 51-61 ◽

Cited By ~ 22

Author(s):

Tibault Reveyrand ◽

Walter Ciccognani ◽

Giovanni Ghione ◽

Olivier Jardel ◽

Ernesto Limiti ◽

...

Keyword(s):

Integrated Circuits ◽

High Power ◽

Nonlinear Models ◽

Low Noise ◽

Low Noise Amplifiers ◽

Self Heating ◽

Gan Hemt ◽

Heating Effects ◽

Parameters Extraction ◽

Load Pull

The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters).

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