Direct measurement of electron beam induced currents in p-type silicon

2010 ◽  
Vol 54 (8) ◽  
pp. 777-780 ◽  
Author(s):  
Myung-Geun Han ◽  
Yimei Zhu ◽  
Katsuhiro Sasaki ◽  
Takeharu Kato ◽  
Craig A.J. Fisher ◽  
...  
Keyword(s):  
Electron Beam ◽  
Direct Measurement ◽  
Type Silicon ◽  
Induced Currents ◽  
P Type

Introduction of Electrical Defects in P-Type Silicon due to Electron-Beam and RF Sputtering Metallization Processes

1983 ◽  
Vol 25 ◽  
Author(s):  
O. Paz ◽  
F. D. Auret
Keyword(s):  
Electron Beam ◽  
Deep Level ◽  
Rf Sputtering ◽  
Electron Beam Evaporation ◽  
Defect States ◽  
Type Silicon ◽  
Carrier Recombination ◽  
Electron Beam Induced Current ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDefects introduced in p-type silicon during RF sputter deposition of Ti-W and electron-beam evaporation of hafnium were investigated using I-V, deep level transient spectroscopy and electron-beam induced current techniques. DLTS measurements indicate the presence of several deposition and evaporation induced defect states. H(0.35) at EV + .35 eV and H(0.38) were the most prominent defects. Minority carrier diffusion length results taken after annealing showed that in the case of the Hf contacts the damage was annealed out while in the case of Ti-W it was not. These differences in carrier recombination are traced to the concentration of H(0.35). Sputtering or evaporation induced damage also increased the barrier height. This observed increase was modeled assuming the introduction of donor-like defects.

Synthesis of Critical Point Energies for 1 MeV Electron Irradiated P-Type Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Onofrio L. Russo ◽  
Katherine A. Dumas ◽  
Michael H. Herman
Keyword(s):  
Electron Beam ◽  
Critical Point ◽  
Low Energy ◽  
Main Structure ◽  
Line Shapes ◽  
Type Silicon ◽  
Boron Doped ◽  
Composite Spectra ◽  
Lorentz Line ◽  
P Type

ABSTRACTThe critical point energies, E0, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, Ei are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type
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