Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

2011 ◽  
Vol 65-66 ◽  
pp. 123-129 ◽  
Author(s):  
A. Afzalian ◽  
D. Flandre
Author(s):  
Lang Zeng ◽  
Yu Ning Zhao ◽  
Yu Hui He ◽  
Xiao Yan Liu ◽  
Gang Du ◽  
...  

2009 ◽  
Vol 105 (8) ◽  
pp. 084317 ◽  
Author(s):  
Hansen Teong ◽  
Kai-Tak Lam ◽  
Sharjeel Bin Khalid ◽  
Gengchiau Liang

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