Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs
2011 ◽
Vol 65-66
◽
pp. 123-129
◽
2011 ◽
Vol 50
(8)
◽
pp. 080211
◽
2002 ◽
Vol 49
(11)
◽
pp. 1897-1902
◽
2009 ◽
Vol 48
(4)
◽
pp. 04C156
◽
2001 ◽
Vol 188
(3)
◽
pp. 1169-1175
◽
2009 ◽
2010 ◽
Vol 49
(10)
◽
pp. 104204
◽