A computational study of thin-body, double-gate, Schottky barrier MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2002.804696 ◽

2002 ◽

Vol 49 (11) ◽

pp. 1897-1902 ◽

Author(s):

Jing Guo ◽

M.S. Lundstrom

Keyword(s):

Schottky Barrier ◽

Computational Study ◽

Thin Body ◽

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Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

Chinese Physics B ◽

10.1088/1674-1056/17/8/051 ◽

2008 ◽

Vol 17 (8) ◽

pp. 3077-3082 ◽

Author(s):

Luan Su-Zhen ◽

Liu Hong-Xia

Keyword(s):

Schottky Barrier ◽

Compact Model ◽

Thin Body ◽

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Erratum to “Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"

Chinese Physics B ◽

10.1088/1674-1056/20/2/027305 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027305

Author(s):

Su-Zhen Luan ◽

Hong-Xia Liu

Keyword(s):

Schottky Barrier ◽

Compact Model ◽

Thin Body ◽

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Optimum body thickness of (111)-oriented ultra-thin body double-gate MOSFETs with respect to quantum-calculated phonon-limited mobility

2009 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2009.5378010 ◽

2009 ◽

Author(s):

Mirko Poljak ◽

Vladimir Jovanovic ◽

Tomislav Suligoj

Keyword(s):

Thin Body ◽

Double Gate ◽

Limited Mobility

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High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs

Science China Information Sciences ◽

10.1007/s11432-011-4267-y ◽

2011 ◽

Vol 54 (8) ◽

pp. 1756-1761

Author(s):

Gang Du ◽

XiaoYan Liu ◽

RuQi Han

Keyword(s):

Schottky Barrier ◽

High Frequency ◽

Thin Body ◽

High Frequency Performance

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Investigation of Quantum Effects in Ultra-Thin Body Single- and Double-Gate Devices Submitted to Heavy Ion Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2006.886206 ◽

2006 ◽

Vol 53 (6) ◽

pp. 3363-3371 ◽

Author(s):

D. Munteanu ◽

V. Ferlet-Cavrois ◽

J. L. Autran ◽

P. Paillet ◽

J. Baggio ◽

...

Keyword(s):

Ion Irradiation ◽

Quantum Effects ◽

Heavy Ion ◽

Thin Body ◽

Double Gate ◽

Heavy Ion Irradiation

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Carbon nanotube field-effect transistors-an example of an ultra-thin body Schottky barrier device

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226919 ◽

2004 ◽

Author(s):

J. Appenzeller ◽

J. Knoch ◽

P. Avouris

Keyword(s):

Carbon Nanotube ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Thin Body ◽

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The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation

Journal of Physics Conference Series ◽

10.1088/1742-6596/38/1/046 ◽

2006 ◽

Vol 38 ◽

pp. 192-195 ◽

Author(s):

A Martinez ◽

J R Barker ◽

A Svizhenko ◽

M P Anantram ◽

A R Brown ◽

...

Keyword(s):

Quantum Simulation ◽

Thin Body ◽

Double Gate ◽

Double Gate Mosfet ◽

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Tunneling and intersubband coupling in ultra-thin body double-gate mosfets

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546593 ◽

2005 ◽

Author(s):

V. Sverdlov ◽

A. Gehring ◽

H. Kosina ◽

S. Selberherr

Keyword(s):

Thin Body ◽

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Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFETs

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. ◽

10.1109/essderc.2003.1256897 ◽

2004 ◽

Author(s):

M. Bescond ◽

J.L. Autran ◽

D. Munteanu ◽

N. Cavassilas ◽

M. Lannoo

Keyword(s):

Schottky Barrier ◽

Atomic Scale ◽

Double Gate ◽

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Mobility enhancement due to volume inversion in [110]-oriented ultra-thin body double-gate nMOSFETs with body thickness less than 5 nm

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. ◽

10.1109/iedm.2005.1609456 ◽

2006 ◽

Author(s):

G. Tsutsui ◽

M. Saitoh ◽

T. Saraya ◽

T. Nagumo ◽

T. Hiramoto

Keyword(s):

Thin Body ◽

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