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Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices
Japanese Journal of Applied Physics
◽
10.1143/jjap.49.104204
◽
2010
◽
Vol 49
(10)
◽
pp. 104204
◽
Cited By ~ 4
Author(s):
Shuichi Toriyama
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Resonant Tunneling
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Barrier Metal
◽
Tunneling Devices
◽
Resonant Tunneling Devices
Download Full-text
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References
High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
◽
10.1116/1.3592483
◽
2011
◽
Vol 29
(3)
◽
pp. 032211
◽
Cited By ~ 2
Author(s):
Myungsim Jun
◽
Youngsam Park
◽
Younghoon Hyun
◽
Taehyoung Zyung
◽
Moongyu Jang
◽
...
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
High Performance
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
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◽
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The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Thin Solid Films
◽
10.1016/j.tsf.2011.09.081
◽
2012
◽
Vol 520
(6)
◽
pp. 2166-2169
Author(s):
Moongyu Jang
◽
Seongjae Lee
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Length
◽
Barrier Metal
Download Full-text
Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
Applied Physics Letters
◽
10.1063/1.2150581
◽
2005
◽
Vol 87
(26)
◽
pp. 263505
◽
Cited By ~ 70
Author(s):
J. Knoch
◽
M. Zhang
◽
Q. T. Zhao
◽
St. Lenk
◽
S. Mantl
◽
...
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Silicon On Insulator
◽
Oxide Semiconductor
◽
Dopant Segregation
◽
Barrier Metal
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20-nm-gate-length erbium-/platinum-silicided n-∕p-type Schottky barrier metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.3025726
◽
2008
◽
Vol 93
(19)
◽
pp. 192112
◽
Cited By ~ 10
Author(s):
Moongyu Jang
◽
Cheljong Choi
◽
Seongjae Lee
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Length
◽
Barrier Metal
◽
P Type
◽
20 Nm
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Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect
Japanese Journal of Applied Physics
◽
10.1143/jjap.47.2660
◽
2008
◽
Vol 47
(4)
◽
pp. 2660-2663
◽
Cited By ~ 3
Author(s):
Lang Zeng
◽
Xiao-Yan Liu
◽
Gang Du
◽
Jin-Feng Kang
◽
Ru-Qi Han
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Lowering Effect
◽
Barrier Metal
Download Full-text
Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.3204439
◽
2009
◽
Vol 95
(8)
◽
pp. 083502
Author(s):
Sung-Jin Choi
◽
Jin-Woo Han
◽
Moongyu Jang
◽
Cheljong Choi
◽
Yang-Kyu Choi
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Current Injection
◽
Oxide Semiconductor
◽
Injection Mechanism
◽
Barrier Metal
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Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors
Applied Physics Letters
◽
10.1063/1.123059
◽
1999
◽
Vol 74
(3)
◽
pp. 454-456
◽
Cited By ~ 33
Author(s):
Q. T. Zhao
◽
F. Klinkhammer
◽
M. Dolle
◽
L. Kappius
◽
S. Mantl
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Barrier Metal
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Formation of erbium-silicide as source and drain for decananometer-scale Schottky barrier metal-oxide-semiconductor field-effect transistors
Materials Science and Engineering B
◽
10.1016/j.mseb.2004.07.032
◽
2004
◽
Vol 114-115
◽
pp. 51-55
◽
Cited By ~ 6
Author(s):
Moongyu Jang
◽
Yarkyeon Kim
◽
Jaeheon Shin
◽
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Metal Oxide
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Field Effect
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Field Effect Transistors
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Platinum silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 20 nm
Electronics Letters
◽
10.1049/el:20081645
◽
2008
◽
Vol 44
(2)
◽
pp. 159
◽
Cited By ~ 6
Author(s):
C.-J. Choi
◽
M.-G. Jang
◽
Y.-Y. Kim
◽
M.-S. Jun
◽
T.-Y. Kim
◽
...
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Barrier Metal
◽
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◽
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Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.3485062
◽
2010
◽
Vol 97
(9)
◽
pp. 092108
◽
Cited By ~ 4
Author(s):
Mincheol Shin
Keyword(s):
Metal Oxide
◽
Schottky Barrier
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Channel Orientation
◽
Barrier Metal
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P Type
Download Full-text
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