High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

2021 ◽  
pp. 108027
Author(s):  
Robin Khosla ◽  
Daniel Schwarz ◽  
Hannes S. Funk ◽  
Kateryna Guguieva ◽  
Jörg Schulze
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Remote Plasma ◽  
High Quality ◽  
Layer Deposition

Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment

2019 ◽  
Vol 40 (1) ◽  
pp. 012806 ◽  
Author(s):  
Hui Hao ◽  
Xiao Chen ◽  
Zhengcheng Li ◽  
Yang Shen ◽  
Hu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Plasma Pretreatment

scholarly journals Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films

2019 ◽  
Vol 37 (4) ◽  
pp. 040901 ◽  
Author(s):  
Fatemeh S. M. Hashemi ◽  
LiAo Cao ◽  
Felix Mattelaer ◽  
Timo Sajavaara ◽  
J. Ruud van Ommen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Nucleation Effects in the Atomic Layer Deposition of Nickel–Aluminum Oxide Thin Films

2020 ◽  
Vol 32 (5) ◽  
pp. 1925-1936 ◽  
Author(s):  
Jon G. Baker ◽  
Joel R. Schneider ◽  
James A. Raiford ◽  
Camila de Paula ◽  
Stacey F. Bent
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Nickel Aluminum ◽  
Oxide Thin Films ◽  
Layer Deposition

Homogenous Thin Films Prepared on Microchannel Plates via Atomic Layer Deposition

2015 ◽  
Vol 1096 ◽  
pp. 93-97
Author(s):  
Bao Jun Yan ◽  
Shu Lin Liu ◽  
Lu Ping Yang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Good Method ◽  
Element Distribution ◽  
Oxide Thin Films ◽  
X Ray ◽  
Precise Control ◽  
Layer Deposition

Oxide thin films such as aluminum oxide doped with zinc (AZO), and aluminum oxide (Al2O3) were prepared in the pores of microchannel plate (MCP) by atomic layer deposition (ALD), which is a precise control thin film thickness on substrate with high aspect ratio structure. In this paper, homogenous oxide thin films deposited on varied substrates were prepared by ALD technology under different conditions, and the morphology, element distribution and structure of deposited samples are systematically investigated by scanning electron microscopy (SEM), energy dispersive x-ray (EDX), and x-ray diffraction (XRD) respectively, The results show that ALD technique is a good method to grow homogenous thin films on MCP.

Sign in / Sign up

Export Citation Format

Share Document