Corrosion resistance of TiO2 films grown on stainless steel by atomic layer deposition

2008 ◽  
Vol 202 (11) ◽  
pp. 2399-2402 ◽  
Author(s):  
C.X. Shan ◽  
Xianghui Hou ◽  
Kwang-Leong Choy
Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...


2015 ◽  
Vol 33 (4) ◽  
pp. 041512 ◽  
Author(s):  
Morteza Aghaee ◽  
Philipp S. Maydannik ◽  
Petri Johansson ◽  
Jurkka Kuusipalo ◽  
Mariadriana Creatore ◽  
...  

2011 ◽  
Vol 104 (1-2) ◽  
pp. 6-11 ◽  
Author(s):  
Hyemin Kang ◽  
Chang-Soo Lee ◽  
Do-Young Kim ◽  
Jungwon Kim ◽  
Wonyong Choi ◽  
...  

2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).


2019 ◽  
Vol 31 (11) ◽  
pp. 3900-3908 ◽  
Author(s):  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Jaime A. Freitas ◽  
Neeraj Nepal ◽  
David R. Boris ◽  
...  

Open Physics ◽  
2004 ◽  
Vol 2 (1) ◽  
Author(s):  
J. Aarik ◽  
V. Bichevin ◽  
I. Jõgi ◽  
H. Käämbre ◽  
M. Laan ◽  
...  

AbstractI-V-characteristics have been measured for Au−TiO2−Ag structures with TiO2 layers of 30 and 180 nm thickness. The TiO2 films were grown by atomic layer deposition (ALD) technique. In the case of negative bias on the Au electrode, the conduction currents through TiO2 layers follow the Fowler-Nordheim formula for field emission over several orders of magnitude. The bulk of the currents may be attributed to tunnelling, seemingly through a Schottky barrier at the Au−TiO2 junction. In the case of reversed polarity the currents are also observed, but cannot be interpreted as tunnelling.


2014 ◽  
Vol 2 (46) ◽  
pp. 9993-10001 ◽  
Author(s):  
Woojin Jeon ◽  
Woongkyu Lee ◽  
Yeon Woo Yoo ◽  
Cheol Hyun An ◽  
Jeong Hwan Han ◽  
...  

The catalytic decomposition of RuO2 with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO2 at the initial growth stage was drastically increased on RuOx (RuO2/Ru mixture) compared to Ru and RuO2.


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