Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

2014 ◽  
Vol 2 (46) ◽  
pp. 9993-10001 ◽  
Author(s):  
Woojin Jeon ◽  
Woongkyu Lee ◽  
Yeon Woo Yoo ◽  
Cheol Hyun An ◽  
Jeong Hwan Han ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Crucial Role ◽  
Growth Stage ◽  
Catalytic Decomposition ◽  
Atomic Layer ◽  
Active Oxygen ◽  
Initial Growth ◽  
Tio2 Films ◽  
Initial Growth Stage ◽  
Layer Deposition

The catalytic decomposition of RuO2 with the help of Ru in the film played the crucial role for the increase in the active oxygen, which results that the growth per cycle of TiO2 at the initial growth stage was drastically increased on RuOx (RuO2/Ru mixture) compared to Ru and RuO2.

Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

2021 ◽  
Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Structure ◽  
Titanium Oxide ◽  
Size Effects ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Structural Modifications ◽  
Layer Deposition ◽  
Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

2009 ◽  
Vol 1156 ◽  
Author(s):  
Sun Kyung Park ◽  
K. Roodenko ◽  
Yves J. Chabal ◽  
L. Wielunski ◽  
R. Kanjolia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Experimental Conditions ◽  
Metallic Component ◽  
Broadband Absorption ◽  
Lorentz Oscillator ◽  
Layer Deposition ◽  
Drude Term ◽  
Number Of Cycles

AbstractAtomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

scholarly journals Low temperature temporal and spatial atomic layer deposition of TiO2 films

2015 ◽  
Vol 33 (4) ◽  
pp. 041512 ◽  
Author(s):  
Morteza Aghaee ◽  
Philipp S. Maydannik ◽  
Petri Johansson ◽  
Jurkka Kuusipalo ◽  
Mariadriana Creatore ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Temporal And Spatial

scholarly journals Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

2007 ◽  
Vol 996 ◽  
Author(s):  
Justin C. Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Sample Surface ◽  
Interfacial Region ◽  
Initial Growth ◽  
Layer Deposition ◽  
Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition

2019 ◽  
Vol 31 (11) ◽  
pp. 3900-3908 ◽  
Author(s):  
Jason R. Avila ◽  
Syed B. Qadri ◽  
Jaime A. Freitas ◽  
Neeraj Nepal ◽  
David R. Boris ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Tio2 Films ◽  
Layer Deposition ◽  
Phase Selectivity

Fowler-nordheim tunnelling in Au−TiO2−Ag film structures

Open Physics ◽  
2004 ◽  
Vol 2 (1) ◽  
Author(s):  
J. Aarik ◽  
V. Bichevin ◽  
I. Jõgi ◽  
H. Käämbre ◽  
M. Laan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Schottky Barrier ◽  
Field Emission ◽  
Atomic Layer ◽  
Negative Bias ◽  
Tio2 Films ◽  
Au Electrode ◽  
Layer Deposition ◽  
Reversed Polarity ◽  
Ag Film

AbstractI-V-characteristics have been measured for Au−TiO2−Ag structures with TiO2 layers of 30 and 180 nm thickness. The TiO2 films were grown by atomic layer deposition (ALD) technique. In the case of negative bias on the Au electrode, the conduction currents through TiO2 layers follow the Fowler-Nordheim formula for field emission over several orders of magnitude. The bulk of the currents may be attributed to tunnelling, seemingly through a Schottky barrier at the Au−TiO2 junction. In the case of reversed polarity the currents are also observed, but cannot be interpreted as tunnelling.

scholarly journals Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells

2016 ◽  
Vol 6 (8) ◽  
pp. 233 ◽  
Author(s):  
Zu-Po Yang ◽  
Hsyi-En Cheng ◽  
I-Hsuan Chang ◽  
Ing-Song Yu
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Tio2 Films ◽  
Layer Deposition

Very Thin TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition (PEALD)

2004 ◽  
Vol 68 (1) ◽  
pp. 129-137 ◽  
Author(s):  
JOONG-JIN PARK ◽  
WON-JAE LEE ◽  
GEUN-HYOUNG LEE ◽  
IL-SOO KIM ◽  
BYOUNG-CHUL SHIN ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Layer Deposition

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

2015 ◽  
Vol 33 (1) ◽  
pp. 01A111 ◽  
Author(s):  
Hao Van Bui ◽  
Frank B. Wiggers ◽  
Anubha Gupta ◽  
Minh D. Nguyen ◽  
Antonius A. I. Aarnink ◽  
...  
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Layer Deposition
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