A low temperature in-situ crystalline TiNi shape memory thin film deposited by magnetron sputtering

2015 ◽  
Vol 284 ◽  
pp. 90-93 ◽  
Author(s):  
Hikmet Cicek ◽  
Ihsan Efeoglu ◽  
Yaşar Totik ◽  
Kadri Vefa Ezirmik ◽  
Ersin Arslan
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Shape Memory

In situ low temperature growth of poly-crystalline germanium thin film on glass by RF magnetron sputtering

2010 ◽  
Vol 94 (9) ◽  
pp. 1501-1505 ◽  
Author(s):  
Chao-Yang Tsao ◽  
Jürgen W. Weber ◽  
Patrick Campbell ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Crystalline Germanium

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

A new approach to characterization of the transition temperatures of thin film NiTi shape memory alloys

2004 ◽  
Vol 19 (6) ◽  
pp. 1762-1767
Author(s):  
Nicholas W. Botterill ◽  
David M. Grant ◽  
Jianxin Zhang ◽  
Clive J. Roberts
Keyword(s):  
Thin Film ◽  
Shape Memory Alloys ◽  
Shape Memory ◽  
Transition Temperatures ◽  
New Approach ◽  
Novel Approach ◽  
Potential Applications ◽  
Niti Shape Memory Alloys

A novel approach in determining the transition temperatures of NiTi shape memory alloys was investigated and compared with conventional techniques. The technique is based on microthemal analysis using a scanning thermal microscope (SThM). In particular, this method has the potential to allow the transformation temperatures of thin films to be investigated in situ. Thin film shape memory alloys have potential applications, such as microactuators, where conventional analysis techniques are either not directly applicable to such samples or are difficult to perform.

scholarly journals Nanoscale Mechanical Properties of Nanoindented Ni48.8Mn27.2Ga24 Ferromagnetic Shape Memory Thin Film

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-5
Author(s):  
Xiaofei Fu ◽  
Chao Liu ◽  
Xili Lu ◽  
Xianli Li ◽  
Jingwei Lv ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Martensitic Transformation ◽  
Magnetron Sputtering ◽  
Shape Memory ◽  
Room Temperature ◽  
Shape Recovery ◽  
Recovery Ratio ◽  
Dc Magnetron Sputtering ◽  
Ferromagnetic Shape Memory

The structure and nanoscale mechanical properties of Ni48.8Mn27.2Ga24 thin film fabricated by DC magnetron sputtering are investigated systematically. The thin film has the austenite state at room temperature with the L21 Hesuler structure. During nanoindentation, stress-induced martensitic transformation occurs on the nanoscale for the film annealed at 823 K for 1 hour and the shape recovery ratio is up to 85.3%. The associated mechanism is discussed.

Correlation Between In Situ Optical Emission Spectroscopy in a Reactive O2 / AR RF Magnetron Sputtering Discharge and PZT Thin Film Composition

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Film Composition

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).

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