Monte Carlo simulation of column growth in plasma spray physical vapor deposition process

2018 ◽  
Vol 335 ◽  
pp. 188-197 ◽  
Author(s):  
P. Wang ◽  
W. He ◽  
G. Mauer ◽  
R. Mücke ◽  
R. Vaßen
2018 ◽  
Vol 428 ◽  
pp. 877-884 ◽  
Author(s):  
Mei-Jun Liu ◽  
Meng Zhang ◽  
Qiang Zhang ◽  
Guan-Jun Yang ◽  
Cheng-Xin Li ◽  
...  

2014 ◽  
Vol 97 ◽  
pp. 1506-1511
Author(s):  
Prasad K.D.V. Yarlagadda ◽  
Tuquabo Tesfamichael ◽  
Michael Schuetz ◽  
Lalitsuri Valiveti ◽  
Tong Li

1997 ◽  
Vol 502 ◽  
Author(s):  
Weizhi Wang ◽  
R. H. Hammond ◽  
M. M. Fejer ◽  
M. R. Beasley

ABSTRACTAtomic absorption spectroscopy with tunable diode lasers has been performed for monitoring and study of the physical vapor deposition process. The combination of the wavelength-modulation spectroscopy with diode lasers and the balanced detection scheme guarantees the high sensitivity and reliability of the system. Direct measurements of atomic flux in e-beam evaporated yttrium and barium, which are components in YBCO superconducting thin films, have been demonstrated. The measured velocities show that the e-beam evaporated atoms are in a non-thermal-equilibrium state, dependent on source conditions, implying that the flux measurement rather than a simple density measurement for rate control is necessary. Comparison with quartz crystal monitors shows that the present scheme, employing two laser beams counterpropagating at an angle to the substrate surface for measuring directly the velocity component normal to the substrate surface, can provide a pressure-independent flux measurement. In yttrium, which has an additional significantly populated metastable level, results show that pressure-independent flux measurement requires measurements at both the ground state and the metastable levels. Efforts have also been made to extend the accessible wavelengths of diode lasers to the UV region by using nonlinear optical frequency doubling techniques for other technologically important elements.


1996 ◽  
Vol 426 ◽  
Author(s):  
Takayuki Negami ◽  
Mikihiko Nishitani ◽  
Naoki Kohara ◽  
Yasuhiro Hashimoto ◽  
Takahiro Wada

AbstractThree real-time composition monitoring methods in physical vapor deposition process of CIGS thin films were proposed. One is the detection of near infrared (NIR) transmittance through the CIGS films from the IR source such as a heater back side of the substrate. One is the detection of NIR reflectance of the incident light from the films. The other is the measurement of the substrate temperature during the preparation of the CIGS films. These methods utilize the difference of the carrier density between Cu-rich (∼ 1020/cm3) and (In+Ga)-rich ( > 1016/cm3) films. The NIR transmittance through and reflectance from the Cu-rich film decrease due to high free carrier absorption. The temperature of the Cu-rich films was lower than that of the (In+Ga)-rich ones under the constant heating power because the Cu-rich films have larger radiation in proportion to absorption. Therefore, the change of Cu/(In+Ga) ratios at stoichiometry can be monitored by the variation of the NIR transmittance, NIR reflectance or the film temperature in real time. These composition monitoring methods are very useful and easily applied to the physical vapor deposition process of the CIGS films for photovoltaic application. The solar cell with active area of about 0.5 cm2, fabricated by obtaining the CIGS film using the latter monitoring method, showed an efficiency of 17.0%.


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