Distribution of O atoms on partially oxidized metal targets, and the consequences for reactive sputtering of individual metal oxides

2020 ◽  
Vol 392 ◽  
pp. 125685 ◽  
Author(s):  
J. Houska ◽  
T. Kozak
Nanoscale ◽  
2019 ◽  
Vol 11 (20) ◽  
pp. 10034-10044 ◽  
Author(s):  
W. Xu ◽  
C. X. Li ◽  
Q. Y. Zhang ◽  
C. Y. Ma ◽  
Q. Wang ◽  
...  

Reactive sputtering deposition of metal oxides onto Ag films for fabrication of hierarchically structured silver oxide films with rich porosity.


2006 ◽  
Vol 88 (16) ◽  
pp. 161504 ◽  
Author(s):  
D. Severin ◽  
O. Kappertz ◽  
T. Kubart ◽  
T. Nyberg ◽  
S. Berg ◽  
...  

2009 ◽  
Vol 105 (9) ◽  
pp. 093302 ◽  
Author(s):  
D. Severin ◽  
O. Kappertz ◽  
T. Nyberg ◽  
S. Berg ◽  
A. Pflug ◽  
...  

Author(s):  
R. Ai ◽  
H.-J. Fan ◽  
L. D. Marks

It has been known for a long time that electron irradiation induces damage in maximal valence transition metal oxides such as TiO2, V2O5, and WO3, of which transition metal ions have an empty d-shell. This type of damage is excited by electronic transition and can be explained by the Knoteck-Feibelman mechanism (K-F mechanism). Although the K-F mechanism predicts that no damage should occur in transition metal oxides of which the transition metal ions have a partially filled d-shell, namely submaximal valence transition metal oxides, our recent study on ReO3 shows that submaximal valence transition metal oxides undergo damage during electron irradiation.ReO3 has a nearly cubic structure and contains a single unit in its cell: a = 3.73 Å, and α = 89°34'. TEM specimens were prepared by depositing dry powders onto a holey carbon film supported on a copper grid. Specimens were examined in Hitachi H-9000 and UHV H-9000 electron microscopes both operated at 300 keV accelerating voltage. The electron beam flux was maintained at about 10 A/cm2 during the observation.


Author(s):  
Michel Fialin ◽  
Guy Rémond

Oxygen-bearing minerals are generally strong insulators (e.g. silicates), or if not (e.g. transition metal oxides), they are included within a rock matrix which electrically isolates them from the sample holder contacts. In this respect, a thin carbon layer (150 Å in our laboratory) is evaporated on the sections in order to restore the conductivity. For silicates, overestimated oxygen concentrations are usually noted when transition metal oxides are used as standards. These trends corroborate the results of Bastin and Heijligers on MgO, Al2O3 and SiO2. According to our experiments, these errors are independent of the accelerating voltage used (fig.l).Owing to the low density of preexisting defects within the Al2O3 single-crystal, no significant charge buildup occurs under irradiation at low accelerating voltage (< 10keV). As a consequence, neither beam instabilities, due to electrical discharges within the excited volume, nor losses of energy for beam electrons before striking the sample, due to the presence of the electrostatic charge-induced potential, are noted : measurements from both coated and uncoated samples give comparable results which demonstrates that the carbon coating is not the cause of the observed errors.


Author(s):  
L. Wan ◽  
R. F. Egerton

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.


1977 ◽  
Vol 38 (C1) ◽  
pp. C1-333-C1-336 ◽  
Author(s):  
P. CAVALLOTTI ◽  
R. ROBERTI ◽  
G. CAIRONI ◽  
G. ASTI

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