TiAlSiN(ag) coatings for high temperature applications: The influence of ag alloying on the morphology, structure, thermal stability and oxidation resistance

Author(s):  
A. AL-Rjoub ◽  
A. Cavaleiro ◽  
Talha Bin Yaqub ◽  
M. Evaristo ◽  
N.M. Figueiredo ◽  
...  
2020 ◽  
Vol 43 (1) ◽  
Author(s):  
TANU SRIVASTAVA ◽  
NARESH KUMAR KATARI ◽  
BALAJI RAO RAVURI ◽  
JUHI KUSHWAHA ◽  
S KRISHNA MOHAN ◽  
...  

2014 ◽  
Vol 12 (3) ◽  
pp. 614-624 ◽  
Author(s):  
Hong Tian ◽  
Ya-Ming Wang ◽  
Yu-Feng Zhang ◽  
Li-Xin Guo ◽  
Jia-Hu Ouyang ◽  
...  

2009 ◽  
Author(s):  
A. Kayani ◽  
K. J. Wickey ◽  
M. I. Nandasiri ◽  
A. Moore ◽  
E. Garratt ◽  
...  

2000 ◽  
Vol 6 (S2) ◽  
pp. 1094-1095
Author(s):  
M. H. Ervin ◽  
K. A. Jones ◽  
M. A. Derenge ◽  
K. W. Kirchnef ◽  
M.C. Wood ◽  
...  

Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.


2018 ◽  
Vol 15 (1) ◽  
pp. 35-40
Author(s):  
A. Novikov ◽  
M. Nowottnick

New technology based on mixing of standard alloy SnCu in form of solder paste with copper paste was presented. This technology allows the production of solder joints with higher standoff consisting of intermetallic compounds. Such solder joints were qualified for high temperature applications by investigation of thermal stability of overlapped solder joints. For this purpose a special test bench for the investigation of remelting temperature up to 300°C was developed.


2010 ◽  
Vol 654-656 ◽  
pp. 468-471
Author(s):  
Xiu Xia Yang ◽  
Jiang Bo Sha ◽  
Hu Zhang

Multi-component Nb-(11,15)Si-5Hf-30Ti-4Al-4W-2B-(8,16)Cr alloys have been proposed, attempting to obtain the Nb-Si based alloys with a comprehensive property. The results show that three phases of NbSS, Nb5Si3 and Laves Cr2Nb exist in the alloys with a Cr content of 16 at%. With increasing Si and Cr contents the fracture toughness KQ decreases, while the oxidation resistance at 1250°C and strength at 1250°C and 1350°C exhibit an increasing tendency. The 15Si-16Cr alloy shows the highest strength and oxidation resistance, and the lowest toughness; they are 385MPa at 1350°C, 215mg/cm2 at 1250°C for 100 h, and 5.45 MPa•m1/2 at room temperature, respectively. The 11Si-8Cr alloy with an NbSS/Nb5Si3 microstructure only has the highest toughness of 11.87 MPa•m1/2, its strength and oxidation resistance are the lowest.


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