Low temperature sputtered ITO on glass and epoxy resin substrates: influence of process parameters and substrate roughness on morphological and electrical properties

2019 ◽  
Vol 17 ◽  
pp. 100365 ◽  
Author(s):  
M. Bragaglia ◽  
F.R. Lamastra ◽  
M. Tului ◽  
L. Di Gaspare ◽  
A. Notargiacomo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Epoxy Resin ◽  
Process Parameters ◽  
Substrate Roughness ◽  
Influence Of Process Parameters

Influence of Process Parameters on the Morphologies of Micro-Injection Molded Polyformaldehyde Parts

2019 ◽  
Vol 34 (3) ◽  
pp. 367-375
Author(s):  
L.-X. Wang ◽  
D.-F. Wang ◽  
L. Jiang ◽  
N. Bian ◽  
Q. Li ◽  
...  
Keyword(s):  
Process Parameters ◽  
Influence Of Process Parameters ◽  
Injection Molded

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Sign in / Sign up

Export Citation Format

Share Document