scholarly journals Influence of process parameters on the electrical properties of n-type and p-type Bi2Te3-based pseudo-ternary thermoelectric materials by the hot-pressing method

2005 ◽  
Vol 54 (7) ◽  
pp. 3321
Author(s):  
Lü Qiang ◽  
Rong Jian-Ying ◽  
Zhao Lei ◽  
Zhang Hong-Chen ◽  
Hu Jian-Min ◽  
...  
2008 ◽  
Vol 55-57 ◽  
pp. 813-816
Author(s):  
T. Kumpeerapun ◽  
Hubert Scherrer ◽  
V. Kosalathip ◽  
I. Sripichai

The short-time-consumption melting and hot pressing processes were used to synthesize n-type and p-type Bi-Sb-Te thermoelectric materials. The synthesis materials were characterized and used for the module fabrication. The aluminium substrate was used instead of alumina substrate because it is easy to cut and to avoid fragility of the module. The performance of 20 x 20 mm2 prototype thermoelectric module consists of 7 pairs of n-type and p-type Bi-Sb-Te thermoelectric materials was investigated and then compared its performance to 40 mm x 40 mm commercial module. The output power densities as a function of temperature difference across the devices and open circuit voltages from the module are reported.


2007 ◽  
Vol 280-283 ◽  
pp. 409-412 ◽  
Author(s):  
Gui Ying Xu ◽  
Xiao Feng Wu ◽  
Li Li Zhang ◽  
Chang Chun Ge

SixGe1-x (x = 0.75 for n-type and 0.7 for p-type) is a typical thermoelectric material used at higher temperature as thermoelectric generator. Its property is dependent on the composition. SixGe1-x containing different amount of fullerite added as hollow quantum dot were fabricated by hot-pressing method. The relations among thermoelectric property, the amount of fullerite and the microstructure were investigated by normal measurement and analytical method.


2012 ◽  
Vol 501 ◽  
pp. 126-128 ◽  
Author(s):  
Arej Kadhim ◽  
Arshad Hmood ◽  
Abu Hassan Haslan

The thermoelectric materials based on p-type Bi2Se3xTe3 (1-x) bulk products and dispersed with x compositions of Se (x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were fabricated using standard solid-state microwave synthesis procedures. The products were characterized by X-ray diffraction (XRD). The XRD characterizations revealed that these products are pure Bi2Te3 and Bi2Se3 with uniform structures. The electrical properties of the Bi2Te3, Bi2Se3 and Bi2Se3xTe3 (1-x) samples were measured in the temperature range of 303–523 K. The highest value of the Seebeck coefficient was 176.3 μV/ K for the Bi2Se0.6Te2.4 sample, but only 149.5 and 87.4 μV/K for the Bi2Te3 and Bi2Se3 samples, respectively.


2005 ◽  
Vol 475-479 ◽  
pp. 1591-1594
Author(s):  
Xiao Feng Wu ◽  
Gui Ying Xu ◽  
Si-Tong Niu ◽  
Chang Chun Ge

BixSb1-x and Bi2Te3 are typical thermoelectric materials used for lower temperature. Samples of Graded materials containing different amount of fullerite or nanometer carbon tube and the were fabricated by hot pressing method. The relations about thermoelectric property, the addition of fullerite or nanometer carbon tube, and the microstructure were investigated in detail by normal measurement or analytical method.


1998 ◽  
Vol 4 (1) ◽  
pp. 75-81 ◽  
Author(s):  
Hee-Jeong Kim ◽  
Hang-Chong Kim ◽  
Dow-Bin Hyun ◽  
Tae-Sung Oh

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