Controlling of c-axis position of ZnO nano-crystalline films deposited at various substrate temperature by ultrasonic spray method

Cu-doped ZnO (CZO) films have been widely discussed due to its potential applications in semiconductor devices, such as gas sensors or solar cells, but few articles were reported to show the effect on properties of CZO films by using different Cu sources. The article demonstrates that CZO films have been prepared by using different Cu source via a simple ultrasonic spray method, in which copper nitrate and copper acetate were used as copper sources. Optical properties of CZO films prepared by copper nitrate and copper acetate were investigated by transmittance and photoluminescence measurement. The X-ray diffraction analysis and field emission scanning electron microscopy were used to investigate the composition and the morphology of the films. The CZO films prepared by using copper acetate shows better optical properties by comprehensive analysis.

Download Full-text

Characterization of Nano-Crystalline Diamond like Carbon (DLC) Films with Substrate Temperature Using Dense Plasma Focusing Method

10.1063/1.3460244 ◽

2010 ◽

Author(s):

Vikram S Yadav ◽

Devendra K Sahu ◽

Manveer Singh ◽

Kuldeep Kumar ◽

D. C. Dhubkarya ◽

...

Keyword(s):

Substrate Temperature ◽

Dense Plasma ◽

Diamond Like Carbon ◽

Nano Crystalline

Download Full-text

Effect of the Substrate Temperature on the Properties of SnO2 Thin Films Prepared by Ultrasonic Spray for Solar Cells Applications

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.59.126 ◽

2019 ◽

Vol 59 ◽

pp. 126-136

Author(s):

Radia Kalai ◽

Amara Otmani ◽

Lakhdar Bechiri ◽

Noureddine Benslim ◽

Abdelaziz Amara ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Substrate Temperature ◽

Optical Measurements ◽

Force Microscopy ◽

Ultrasonic Spray ◽

Transmission Electron ◽

Vis Spectroscopy ◽

High Absorption Coefficient ◽

Surface Morphologies

Structural, optical and electrical properties of SnO2 thin films deposited by spray ultrasonic technique were investigated by varying substrate temperature. The structural characterization of the films was analyzed via X-ray diffraction (XRD) technique and transmission electron microscopy (TEM). Films surface morphologies were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Optical absorption spectrum was recorded using the UV–Vis spectroscopy and the films were found to be transparent. Optical measurements showed that the layers had a relatively high absorption coefficient of 105 cm−1. A shift in the absorption edge was observed and the films exhibited direct transitions with band gap energies ranging from 3.85 to 3.94 eV.

Download Full-text

Deposition and Characterization of Boron Doped ZnO Thin Films by Ultrasonic Spray Pyrolysis Method

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.475-476.1280 ◽

2013 ◽

Vol 475-476 ◽

pp. 1280-1283 ◽

Cited By ~ 1

Author(s):

Ling Yang ◽

Yu Pei Zhang ◽

Ji Wen Xu ◽

Hua Wang

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Doping Level ◽

Ultrasonic Spray Pyrolysis ◽

Spray Pyrolysis Method ◽

Ultrasonic Spray ◽

Boron Doped ◽

Visible Transmittance ◽

Pyrolysis Method ◽

Doped Zno

Boron doped ZnO (BZO) thin films were deposited on glass substrate by ultrasonic spray pyrolysis method using zinc acetylacetonate and boric acid. The structural, morphological, optical and electrical properties of BZO thin films under various doping level of boron and substrate temperature were investigated. The results show that zinc acetylacetonate is helpful to deposit BZO thin films at low temperature. The morphology of grains at low and high substrate temperature is circular and flake-like. The preferred orientation along (101) plane is obvious at 360 °C. The doping level and substrate temperature have remarkable influence on sheet resistance, but little impact on visible transmittance. The optimal sheet resistance of 173 Ω/sq and average visible transmittance of above 80% can be achieved at doping level of 5 at% and growth temperature of 340 °C.

Download Full-text