Deposition and Characterization of Boron Doped ZnO Thin Films by Ultrasonic Spray Pyrolysis Method

2013 ◽  
Vol 475-476 ◽  
pp. 1280-1283 ◽  
Author(s):  
Ling Yang ◽  
Yu Pei Zhang ◽  
Ji Wen Xu ◽  
Hua Wang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Doping Level ◽  
Ultrasonic Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Ultrasonic Spray ◽  
Boron Doped ◽  
Visible Transmittance ◽  
Pyrolysis Method ◽  
Doped Zno

Boron doped ZnO (BZO) thin films were deposited on glass substrate by ultrasonic spray pyrolysis method using zinc acetylacetonate and boric acid. The structural, morphological, optical and electrical properties of BZO thin films under various doping level of boron and substrate temperature were investigated. The results show that zinc acetylacetonate is helpful to deposit BZO thin films at low temperature. The morphology of grains at low and high substrate temperature is circular and flake-like. The preferred orientation along (101) plane is obvious at 360 °C. The doping level and substrate temperature have remarkable influence on sheet resistance, but little impact on visible transmittance. The optimal sheet resistance of 173 Ω/sq and average visible transmittance of above 80% can be achieved at doping level of 5 at% and growth temperature of 340 °C.

Effect of Cu/In Ratio on Properties of CuInS2 Films Prepared by Ultrasonic Spray Pyrolysis Method

2011 ◽  
Vol 199-200 ◽  
pp. 1936-1939
Author(s):  
Xiao Zhang ◽  
Hua Wang ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Xrd Analysis ◽  
Chalcopyrite Structure ◽  
Spray Pyrolysis Method ◽  
Visible Absorption ◽  
Ultrasonic Spray ◽  
Pyrolysis Method ◽  
Ultrasonic Spray Pyrolysis Method

CuInS2 thin films were prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different Cu/In ratios have been investigated. X-ray diffraction (XRD) analysis demonstrated that as-prepared CuInS2 thin films with chalcopyrite structure have a preferential orientation along the (112) direction. SEM study shows films are relatively dense and smooth, but the much bigger grains and the large coherent agglomerates appear in films (Cu/In>1.25) due to the appearance of phase Cu2S. CuInS2 thin film (Cu/In=1.25) has a strong visible absorption and its energy band gap comes up to 1.45eV.

Effect of Different S/In Ratio on Properties of In2S3 Films Prepared by Ultrasonic Spray Pyrolysis Method

2011 ◽  
Vol 474-476 ◽  
pp. 998-1001
Author(s):  
Xiao Zhang ◽  
Hua Wang ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Stoichiometric Composition ◽  
Visible Region ◽  
Ultrasonic Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Ultrasonic Spray ◽  
Photoelectric Properties ◽  
Pyrolysis Method ◽  
Ultrasonic Spray Pyrolysis Method

In2S3 thin films have been prepared on heated glass substrates by ultrasonic spray pyrolysis method. Structure, surface morphology and properties of films with different S/In ratios have been investigated. XRD analysis demonstrated that as-prepared In2S3 thin films have a preferential orientation along the (220) direction and no other phases are observed. Uniformity, density, crystallinity of films were significantly affected by S/In ratios, which influence photoelectric properties of the films. In2S3 thin film is close to standard stoichiometric composition when S/In ratio is 2. Optical transmittance of films is over 90% in the visible region and its energy band gap come up to 2.46eV.

Characterization of CuInS2 Thin Films Grown by Transducer-based Ultrasonic Spray Pyrolysis for PV Solar Cells Applications

2016 ◽  
Vol 19 (3) ◽  
pp. 169-179 ◽  
Author(s):  
Eric Nguwuo Petuenju ◽  
Oumarou Savadogo
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Ultrasonic Spray ◽  
Pyrolysis Method ◽  
Cuins2 Thin Films ◽  
First Time

For the first time, the elaboration of CuInS2 thin films was achieved using the transducer-based ultrasonic spray pyrolysis method with methanol as solvent. Precursor solutions were prepared with copper dichloride dihydrate [CuCl2.2H2O], indium (III) chloride tetrahydrate [InCl3.4H2O] and thiourea [SC(NH2)2] at different ratios. In2S3 clusters (μdots) were obtained from an aqueous solution with precursors ratio Cu:In:S = 1.3:1:3.9, 1.4:1:3.9, 1.5:1:3.9. CuInS2 thin films were obtained from a solution of methanol with precursors ratio Cu:In:S = 1:1:4. The In concentration was 3 x 10-3 mol/l. The crystalline structure and their morphology ware characterised by SEM and their chemical composition by EDAX, The bandgap of CuInS2, equals to 1.40 eV, was determined by spectrophotometry.

Sign in / Sign up

Export Citation Format

Share Document