Characterization of Nano-Crystalline Diamond like Carbon (DLC) Films with Substrate Temperature Using Dense Plasma Focusing Method

2010 ◽  
Author(s):  
Vikram S Yadav ◽  
Devendra K Sahu ◽  
Manveer Singh ◽  
Kuldeep Kumar ◽  
D. C. Dhubkarya ◽  
...  
Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 729
Author(s):  
Chanida Puttichaem ◽  
Guilherme P. Souza ◽  
Kurt C. Ruthe ◽  
Kittipong Chainok

A novel, high throughput method to characterize the chemistry of ultra-thin diamond-like carbon films is discussed. The method uses surface sensitive SEM/EDX to provide substrate-specific, semi-quantitative silicon nitride/DLC stack composition of protective films extensively used in the hard disk drives industry and at Angstrom-level. SEM/EDX output is correlated to TEM to provide direct, gauge-capable film thickness information using multiple regression models that make predictions based on film constituents. The best model uses the N/Si ratio in the films, instead of separate Si and N contributions. Topography of substrate/film after undergoing wear is correlatively and compositionally described based on chemical changes detected via the SEM/EDX method without the need for tedious cross-sectional workflows. Wear track regions of the substrate have a film depleted of carbon, as well as Si and N in the most severe cases, also revealing iron oxide formation. Analysis of film composition variations around industry-level thicknesses reveals a complex interplay between oxygen, silicon and nitrogen, which has been reflected mathematically in the regression models, as well as used to provide valuable insights into the as-deposited physics of the film.


1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2010 ◽  
Vol 256 (21) ◽  
pp. 6403-6407 ◽  
Author(s):  
Hua Pang ◽  
Xingquan Wang ◽  
Guling Zhang ◽  
Huan Chen ◽  
Guohua Lv ◽  
...  

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