The Effect of the Cu Source on Optical Properties of Cu-Doped ZnO Films

2014 ◽  
Vol 936 ◽  
pp. 618-623
Author(s):  
Lung Chien Chen ◽  
Xiu Yu Zhang ◽  
Kuan Lin Lee
Keyword(s):  
Optical Properties ◽  
Copper Acetate ◽  
Copper Nitrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray ◽  
Spray Method ◽  
Potential Applications ◽  
Doped Zno

Cu-doped ZnO (CZO) films have been widely discussed due to its potential applications in semiconductor devices, such as gas sensors or solar cells, but few articles were reported to show the effect on properties of CZO films by using different Cu sources. The article demonstrates that CZO films have been prepared by using different Cu source via a simple ultrasonic spray method, in which copper nitrate and copper acetate were used as copper sources. Optical properties of CZO films prepared by copper nitrate and copper acetate were investigated by transmittance and photoluminescence measurement. The X-ray diffraction analysis and field emission scanning electron microscopy were used to investigate the composition and the morphology of the films. The CZO films prepared by using copper acetate shows better optical properties by comprehensive analysis.

The Structural and Optical Properties of(Cu, Al):ZnO Films

2013 ◽  
Vol 641-642 ◽  
pp. 547-550 ◽  
Author(s):  
Ying Xiang Yang ◽  
Hong Lin Tan ◽  
Cheng Lin Ni ◽  
Chao Xiang
Keyword(s):  
Optical Properties ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Grain Sizes ◽  
Doped Zno

Un-doped and (Cu, Al)-doped ZnO thin films were prepared by sol-gel spin coating technique on glass substrate. The effect of(Cu, Al)incorporation on the structural, morphological and optical properties of the Zinc oxide (ZnO)film was investigated by means of X-ray diffraction, scanning electron microscopy and UV-vis spectrophotometer. It has been found that the grain sizes, Optical band gap and the preferred orientation growth of (002) plane were decreased with increasing of (Cu, Al) dopants amount in ZnO films.

Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions

2009 ◽  
Vol 609 ◽  
pp. 133-137 ◽  
Author(s):  
N. Zebbar ◽  
M.S. Aida ◽  
A.E.K. Hafdallah ◽  
O. Daranfad ◽  
H. Lekiket ◽  
...  
Keyword(s):  
Zno Films ◽  
X Ray Diffraction ◽  
Small Current ◽  
Si Substrates ◽  
Ultrasonic Spray ◽  
Spray Method ◽  
Current Voltage ◽  
Maximum Conductivity ◽  
Doped Zno ◽  
Substrate Temperatures

Experimental analysis of current –voltage and capacitance-voltage characteristics of n-ZnO/p-Si (100) heterostructures were presented. Undoped and In-doped ZnO films were deposited by the simple ultrasonic spray method on p-Si substrates (100) at varied substrate temperatures from 200 to 400°C. The structural and optical properties of ZnO films were investigated using X-ray diffraction (XRD) and transmission spectra respectively. The electrical conductivity is calculated from transport measurement in a two probes coplanar structure. It is found that the doped ZnO: In films have higher (002) diffraction peak than undoped ZnO. All films exhibit a high transparency about 85%. The maximum conductivity is observed at 350°C for doped films but increases with substrate temperature for undoped ones. Current–voltage (I-V) characteristics of all n-ZnO/p-Si heterojunctions exhibit non linear characteristics with a small current leakage in the reverse voltage. The obtained device shows a barrier height in the order of 0.65 eV, this is consistent with the theoretical value 0.67eV. The capacitance increases with increasing reverse bias in an approximately linear 1/C2-V relationship.

Properties of Li-Doped ZnO Films Deposited on Diamond Films

2013 ◽  
Vol 544 ◽  
pp. 234-237
Author(s):  
Mei Ai Lin ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Bing Ren ◽  
...  
Keyword(s):  
Diamond Films ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Reactive Gas

Li-doped zinc oxide (ZnO) films were deposited on nucleation side of freestanding diamond (FSD) films by the radio frequency magnetron sputtering method. The effect of oxygen partial pressure on structural, optical and electrical properties of the ZnO films was investigated by X-ray diffraction (XRD) Raman spectroscopy, semiconductor characterization system and Hall effect measurement system. The results showed that the introduction of oxygen as a reactive gas was helpful to improve the crystalline quality of Li-doped ZnO films.

Optical Properties of Cu-Doped ZnO Films Prepared by Cu Solution Coating

2015 ◽  
Vol 15 (10) ◽  
pp. 7664-7670 ◽  
Author(s):  
Bunyod Allabergenov ◽  
Seok-Hwan Chung ◽  
Sungjin Kim ◽  
Byeongdae Choi
Keyword(s):  
Grain Size ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Coating Method ◽  
Higher Temperature ◽  
Doped Zno ◽  
Process Energy ◽  
Beam Deposition

This work demonstrates the fabrication of Cu-doped ZnO films by Cu solution coating method. Cu ink was spin coated on ZnO thin films prepared by e-beam deposition. After curing and annealing at high temperatures, structural, morphological and optical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectrofluorometer, respectively. The XRD results showed that ZnO films formed polycrystalline with a hexagonal wurtzite structure, and the grain size increased with increasing the annealing temperature from 500 to 850 °C. The changes in lattice parameters were caused by grain size, strain, and residual stress. Morphological analysis have revealed that the Cu-doped ZnO film after annealing at 500 °C has flat surface with uniformly distributed grain size, which became porous after higher temperature annealing process. Energy dispersive spectroscopy (EDS) and photoluminescence spectras have shown the presence of Zn, Cu, and O elements, and combined violet, blue, green and weak red emissions between 350 and 650 nm in the ZnO films, respectively.

scholarly journals Synthesis and Characterization of Na Doped ZnO Rods Grown by Simple Chemical Method

2020 ◽  
Vol 26 (4) ◽  
pp. 387-391
Author(s):  
Sibel MORKOÇ KARADENİZ ◽  
Hatice Kübra BÖLÜKBAŞI ÇIPLAK ◽  
Ali Ercan EKİNCİ
Keyword(s):  
Optical Properties ◽  
Chemical Method ◽  
Zinc Nitrate ◽  
Zno Films ◽  
Nitrate Hexahydrate ◽  
X Ray ◽  
Structure Morphology ◽  
Simple Chemical ◽  
Doped Zno

In this study, the effects of Na doped on the structure, morphology, and optical properties of the ZnO films deposited on glass substrate were investigated. The films were synthesized on glass substrates via a simple chemical method. Undoped and Na-doped ZnO films were obtained from an aqueous solution of the Zinc nitrate hexahydrate (Zn(NO3)2·6H2O), Sodium Nitrate (NaNO3) and hexamethylenetetramine-HMT (C6H12N4). Characterization of the films was examined using a Scanning electron microscope (SEM) and X-ray diffractometer (XRD), Ultraviolet-Visible spectrophotometer (UV-Vis) and X-Ray Photoelectron (XPS). The structure, morphology, and optical properties of the films were presented. The wurtzite ZnO films showed rod arrays morphology. The optical band gap increased with the doping of Na metal. The result shows that Na addition affected the properties of the ZnO films.

Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

Effect of N and P codoping on ZnO properties

2013 ◽  
Vol 645 ◽  
pp. 64-67 ◽  
Author(s):  
Jin Zhong Wang ◽  
Elangovan Elamurugu ◽  
Hong Tao Li ◽  
Shu Jie Jiao ◽  
Lian Cheng Zhao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

Growth of CuS Nanostructures by Hydrothermal Route and Its Optical Properties

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Murugan Saranya ◽  
Chella Santhosh ◽  
Rajendran Ramachandran ◽  
Andrews Nirmala Grace
Keyword(s):  
Optical Properties ◽  
Cetyltrimethylammonium Bromide ◽  
Copper Nitrate ◽  
X Ray Diffraction ◽  
Sodium Thiosulphate ◽  
Hydrothermal Route ◽  
X Ray ◽  
Vis Spectroscopy ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

CuS nanostructures have been successfully synthesized by hydrothermal route using copper nitrate and sodium thiosulphate as copper and sulfur precursors. Investigations were done to probe the effect of cationic surfactant, namely, Cetyltrimethylammonium bromide (CTAB) on the morphology of the products. A further study has been done to know the effect of reaction time on the morphology of CuS nanostructures. The FE-SEM results showed that the CuS products synthesized in CTAB were hexagonal plates and the samples prepared without CTAB were nanoplate like morphology of sizes about 40–80 nm. Presence of nanoplate-like structure of size about 40–80 nm was observed for the sample without CTAB. The synthesized CuS nanostructures were characterized by X-ray diffraction (XRD), FE-SEM, DRS-UV-Vis spectroscopy, and FT-IR spectroscopy. A possible growth mechanism has been elucidated for the growth of CuS nanostructures.

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