Role of buffer layer on the performances of amorphous silicon solar cells with incorporated nanoparticles produced by plasma enhanced chemical vapor deposition at 27.12 MHz

2005 ◽  
Vol 487 (1-2) ◽  
pp. 170-173 ◽  
Author(s):  
L. Raniero ◽  
S. Zhang ◽  
H. Águas ◽  
I. Ferreira ◽  
R. Igreja ◽  
...  
1996 ◽  
Vol 426 ◽  
Author(s):  
Seung Jae Baik ◽  
Jinsoo Song ◽  
Koeng Su Lim

AbstractTo obtain high quality ZnO thin films for use as transparent electrodes of amorphous silicon solar cells, hydrogen treatment of the films using photo-chemical vapor deposition was performed for the first time. The as-deposited ZnO thin film was irradiated by UV light during the flow of hydrogen molecules in the presence of photo-sensitizers of mercury. As the treatment time increased, resistivity decreased from 1 × 10−2Ωcm to 2 × 10−3Ωcm. Moreover, haze ratio increased from 20% to 48%. Hydrogen radicals were thought to be playing various roles on the neighborhood of the surface region and the grain boundary region. This new trial gave us new understanding into the relation between hydrogen and ZnO. Moreover, these results could be applied to the process of amorphous silicon solar cells and a possible increase of efficiency is expected.


1999 ◽  
Vol 557 ◽  
Author(s):  
Satoshi Shimizu ◽  
Kojiro Okawa ◽  
Toshio Kamiya ◽  
C.M. Fortmann ◽  
Isamu Shimizu

AbstractThe preparation of amorphous silicon films and solar cells using SiH2Cl2 source gas and electron cyclotron resonance assisted chemical vapor deposition (ECR-CVD) was investigated. By using buffer layers to protect previously deposited layers improved a-Si:H(Cl) solar cells were prepared and studied. The high quality a-Si:H(Cl) films used in this study exhibited low defect densities (~1015cm-3) and high stability under illumination even when the deposition rate was increased to ~15A/s. The solar cells were deposited in the n-i-p sequence. These solar cells achieved VOC values of ~ 0.89V and ~ 3.9% efficiency on Ga doped ZnO (GZO) coated specular substrate. The a-Si:H(C1) electron and hole μτ products were ~10-8cm2/V.


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