Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

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Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.480-481.629 ◽

2011 ◽

Vol 480-481 ◽

pp. 629-633

Author(s):

Wen Teng Chang ◽

Yu Ting Chen ◽

Chung Chin Kuo

Keyword(s):

Silicon Carbide ◽

Quantum Wells ◽

Quantum Confinement Effect ◽

Chemical Vapor ◽

Blue Shift ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Plasma Chemical ◽

Hydrogenated Silicon ◽

Plasma Chemical Vapor Deposition

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

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Optical nonlinearities in multiple quantum wells: New insight on band-gap renormalization

Physical Review B ◽

10.1103/physrevb.38.13443 ◽

1988 ◽

Vol 38 (18) ◽

pp. 13443-13446 ◽

Cited By ~ 25

Author(s):

J. A. Levenson ◽

I. Abram ◽

R. Raj ◽

G. Dolique ◽

J. L. Oudar ◽

...

Keyword(s):

Quantum Wells ◽

Band Gap ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Optical Nonlinearities

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TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE OF FLAT AND UNDULATED SiGe/Si MULTIPLE QUANTUM WELLS

International Journal of Modern Physics B ◽

10.1142/s0217979202015108 ◽

2002 ◽

Vol 16 (28n29) ◽

pp. 4211-4214 ◽

Cited By ~ 3

Author(s):

B. W. CHENG ◽

J. G. ZHANG ◽

Y. H. ZUO ◽

R. W. MAO ◽

C. J. HUANG ◽

...

Keyword(s):

Elevated Temperature ◽

Quantum Wells ◽

Blue Shift ◽

Band Alignment ◽

Multiple Quantum Wells ◽

Luminescence Spectra ◽

Multiple Quantum ◽

Type Ii ◽

Thermally Activated ◽

Strained Sige

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat samples has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

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Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

MRS Proceedings ◽

10.1557/proc-693-i6.22.1 ◽

2001 ◽

Vol 693 ◽

Author(s):

J. Zhao ◽

X. D. Zhang ◽

Z. C. Feng ◽

J. C. Deng ◽

P. Jin ◽

...

Keyword(s):

Quantum Wells ◽

Band Gap ◽

Annealing Temperature ◽

Multiple Quantum Well ◽

Blue Shift ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Cladding Layer ◽

Cap Layer ◽

Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

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