Improved transport properties of microcrystalline silicon films grown by HWCVD with a variable hydrogen dilution process

2008 ◽  
Vol 516 (5) ◽  
pp. 568-571 ◽  
Author(s):  
Chisato Niikura ◽  
Romain Brenot ◽  
Joelle Guillet ◽  
Jean-Eric Bourée
Keyword(s):  
Transport Properties ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution

Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Oxygen Content ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline ◽  
Doped Silicon

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

Helium Versus Hydrogen Dilution of Silane in the Deposition of Polymorphous Silicon Films: Effects on the Structure and the Transport Properties

2003 ◽  
Vol 762 ◽  
Author(s):  
O. Saadane ◽  
S. Lebib ◽  
A.V. Kharchenko ◽  
V. Suendo ◽  
C. Longeaud ◽  
...  
Keyword(s):  
Transport Properties ◽  
Deposition Rate ◽  
Diffusion Length ◽  
Good Alternative ◽  
Silicon Films ◽  
Rf Power ◽  
Hydrogen Incorporation ◽  
Hydrogen Dilution ◽  
Hole Diffusion Length ◽  
Hydrogen Effusion

AbstractWe compare the deposition rate, hydrogen incorporation and optoelectronic properties of hydrogenated polymorphous silicon films produced either by the decomposition of silane-hydrogen or of silane-helium mixtures. Our results clearly show that He dilution allows to drastically reduce the RF power needed to achieve the same deposition rate as in the case of H2 dilution. Infrared spectroscopy and hydrogen effusion experiments show clear differences in the hydrogen bonding and content in both series of films. Interestingly, both He and hydrogen dilution result in films with improved transport properties, in particular the hole diffusion length, with respect to standard amorphous silicon. These results indicate that He dilution is a good alternative to H2 dilution to prepare intrinsic layers for solar cells.

Room Temperature Fabrication of Micro-Crystalline Silicon Films for Tft's By Ecr Pecvd

1993 ◽  
Vol 334 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Seok-Woon Lee ◽  
Seung-Ki Joo
Keyword(s):  
Silicon Nitride ◽  
Crystalline Phase ◽  
Etch Rate ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution ◽  
Crystalline Films ◽  
Etched Silicon

AbstractMicrocrystalline silicon films were formed at room temperature without hydrogen dilution by ECR PECVD. Microwave power more than 400 W was necessary to get crystalline films and the crystallinity increased with the power thereafter. Addition of hydrogen and argon enhanced the crystalline phase formation and the deposition rate, the reason of which was found that hydrogen etched silicon films and argon addition drastically increased the etch rate. Annealing of the films showed that microcrystalline silicon films formed by ECR PECVD have a small fraction of amorphous phase. TFT's using silicon nitride and doped/undoped microcrystalline silicon films were fabricatedd with whole processes at room temperature.

scholarly journals Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution

1996 ◽  
Vol 80 (9) ◽  
pp. 4971-4975 ◽  
Author(s):  
U. Kroll ◽  
J. Meier ◽  
A. Shah ◽  
S. Mikhailov ◽  
J. Weber
Keyword(s):  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution

Low temperature electric transport properties in hydrogenated microcrystalline silicon films

2007 ◽  
Vol 515 (19) ◽  
pp. 7629-7633 ◽  
Author(s):  
G. Ambrosone ◽  
U. Coscia ◽  
A. Cassinese ◽  
M. Barra ◽  
S. Restello ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Silicon Films ◽  
Electric Transport ◽  
Microcrystalline Silicon

scholarly journals Hydrogenated Microcrystalline Silicon: From Material to Solar Cells

2000 ◽  
Vol 609 ◽  
Author(s):  
N. Wyrsch ◽  
C. Droz ◽  
L. Feitknecht ◽  
M. Goerlitzer ◽  
U. Kroll ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transport Properties ◽  
Defect Density ◽  
Chemical Vapour ◽  
Impurity Content ◽  
Quality Parameter ◽  
Oxygen Impurity ◽  
Microcrystalline Silicon ◽  
Cell Efficiency ◽  
Hydrogen Dilution

ABSTRACTUndoped hydrogenated microcrystalline silicon (νc-Si:H) layers and solar cells have been deposited by plasma-enhanced chemical vapour at low temperature and at different values of VHF plasma power and silane to hydrogen dilution ratios. Transport and defect density measurements on layers suggest that structural properties (e.g. crystallite shape and size) only marginally influence the electronic transport properties. The latter are influenced strongly by the Fermi level, which depends on the oxygen impurity content. Furthermore, they are best described by the quality parameter ν0τ0 (deduced from photoconductivity and ambipolar diffusion length). Cell efficiency correlates better with νoτ0 than with the defect density as determined from subbandgap absorption. Anisotropy of the transport properties in some νc-Si:H is also demonstrated but does not seem to play a major role in νc-Si:H cells deposited at high rates under VHF glow discharge conditions.

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