Room Temperature Fabrication of Micro-Crystalline Silicon Films for Tft's By Ecr Pecvd

1993 ◽  
Vol 334 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Seok-Woon Lee ◽  
Seung-Ki Joo
Keyword(s):  
Silicon Nitride ◽  
Crystalline Phase ◽  
Etch Rate ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution ◽  
Crystalline Films ◽  
Etched Silicon

AbstractMicrocrystalline silicon films were formed at room temperature without hydrogen dilution by ECR PECVD. Microwave power more than 400 W was necessary to get crystalline films and the crystallinity increased with the power thereafter. Addition of hydrogen and argon enhanced the crystalline phase formation and the deposition rate, the reason of which was found that hydrogen etched silicon films and argon addition drastically increased the etch rate. Annealing of the films showed that microcrystalline silicon films formed by ECR PECVD have a small fraction of amorphous phase. TFT's using silicon nitride and doped/undoped microcrystalline silicon films were fabricatedd with whole processes at room temperature.

Properties and Application of Undoped Hydrogenated Microcrystalline Silicon Thin Films

1989 ◽  
Vol 149 ◽  
Author(s):  
J. Kanicki ◽  
E. Hasan ◽  
D. F. Kotecki ◽  
T. Takamori ◽  
J. H. Griffith
Keyword(s):  
Grain Size ◽  
Deposition Temperature ◽  
Etch Rate ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Deposition Conditions

ABSTRACTDevice quality undoped hydrogenated microcrystalline silicon has been prepared by plasma enhanced chemical vapor deposition under different conditions. The dependence of physical, chemical, structural, and electrical properties on the deposition conditions has been investigated. Conductive (conductivity above 10−3Ω−1 cm−1) and resistive (conductivity around 10−9Ω−1cm−1) layers having approximately the same grain size, at a given substrate temperature, have been deposited between 200 and 500°C at two different hydrogen dilutions. Independently of the hydrogen dilution, the average grain sized is dependent on the deposition temperature and the film thickness; and a maximum average grain size of about 40 nm has been achieved for a thick film deposited at 500°C. The density of paramagnetic defects also increases with increasing deposition temperature, which indicates that more dangling bond defects are introduced as the total area of the grain boundaries increases. The etch rate decreases with increasing deposition temperature, and for the films deposited at 250 and 500°C the etch rate has been measured to be 6.6 and 2.7 nm/min, respectively. Thin film transistors incorporating a microcrystalline channel have been fabricated and evaluated. The best device had the following properties: field effect mobility, threshold voltage, and on/off current ratio of about 0.8 cm2/V sec, below 5 V, and around 106, respectively.

Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Oxygen Content ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline ◽  
Doped Silicon

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

scholarly journals Optical and Electrical Properties of Undoped Microcrystalline Silicon Deposited by the VHF-GD with Different Dilutions of Silane in Hydrogen

1996 ◽  
Vol 452 ◽  
Author(s):  
N. Beck ◽  
P. Orres ◽  
J. Fric ◽  
Z. Remeš ◽  
A. Poruba ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Time Of Flight ◽  
Optical And Electrical Properties ◽  
Microcrystalline Silicon ◽  
Transient Time ◽  
Deep Traps ◽  
Flight Measurements ◽  
Strong Dilution

AbstractWe show that the optical and electrical properties of microcrystalline silicon (μc-Si:H) deposited by the VHF-GD technique at 110 MHz can considerably be tuned by changing the dilution ratio of silane to hydrogen.With increasing silane dilution we observe enhanced optical absorption for energies below 2 eV due to the transition of the material from amorphous / microcrystalline mixture to a pure microcrystalline phase. Simultaneously, the light scattering and the defect absorption increases. Strong dilution also promotes the incorporation of impurities into the material, leading to a pronounced extrinsic behaviour as seen from the decrease of the activiation energy of the electrical conductivity.The electrical properties were investigated in the dark by the Time of Flight technique. We measured drift mobilities at room temperature which slightly increase with dilution, reaching values of 3 cm2/Vs for electrons and 1.2 cm2/Vs for holes. The ratio between electron and hole drift mobilities is found to be around 2 for all samples studied, similar to that of crystalline silicon.Furthermore, post-transient Time of Flight measurements revealed detrimental electron deep traps in low dilution material.

Electrical Properties of Silicon Nitride Thin Films Fabricated by ECR PECVD at Room Temperature

1992 ◽  
Vol 284 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Hoyoung Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Trap States ◽  
Dominant Conduction Mechanism ◽  
Frenkel Emission ◽  
New Interpretation

ABSTRACTSilicon nitride thin films were deposited on single crystalline silicon substrates at room temperature by ECR PECVD with SiH4 and N2 as source gases and the electrical properties were analyzed. The dominant conduction mechanism in a high field was Poole-Frenkel emission. A ledge in I-V curve was observed in the first voltage ramp and it was found to originate from the field reduction at the injecting electrode due to the charge trapped in deep traps in the film. It also turned out that the ledge is a characteristic of monopolar conduction. A new interpretation of the current at low field — tunneling into trap states — was proposed and the current variations according to the field and temperature could be well explained.

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

2009 ◽  
Vol 18 (2) ◽  
pp. 773-777 ◽  
Author(s):  
Wang Jin-Xiao ◽  
Qin Yan-Li ◽  
Yan Heng-Qing ◽  
Gao Ping-Qi ◽  
Li Jun-Shuai ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Plasma Cvd ◽  
Columnar Growth ◽  
Coated Glass ◽  
Inductively Coupled

Photoreflectance Characterisation of Reactive Ion Etched Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
M. Murtagh ◽  
J. T. Beechinor ◽  
P. A. F. Herbert ◽  
P.V. Kelly ◽  
G. M. Crean ◽  
...  
Keyword(s):  
Etch Rate ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Applied Bias ◽  
Plasma Surface ◽  
Rate Analysis ◽  
Etched Silicon ◽  
P Type ◽  
Etch Bias

AbstractReactive ion etching (RIE) of p-type 2-3 †cm resistivity silicon (100) was characterised using Photoreflectance (PR), Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Isochronal (5 minutes) etching was performed at various DC etch biases (0-500V) using a SiCl4 etch chemistry. The substrate etch rate dependence on applied bias was determined using mechanical profilometry. A distinct shift in the A3–A1 Si transition and significant spectral broadening of the room temperature PR spectra was observed as a function of etch bias. Photoreflectance results are correlated with RBS, SE and etch rate analysis. It is demonstrated that the PR spectra reflect a complex, competitive, plasma-surface interaction during the RIE process.

scholarly journals Nitrogenation of Amorphous Silicon : Reactive Molecular Dynamics Simulations

2019 ◽  
Vol 8 (3) ◽  
pp. 197-207
Author(s):  
Mauludi Ariesto Pamungkas ◽  
◽  
Choirun Nisa ◽  
Istiroyah Istiroyah ◽  
Abdurrouf Abdurrouf ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Nitrogen Atom ◽  
Molecular Dynamics Simulations ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
Reactive Force ◽  
Reactive Molecular Dynamics ◽  
Dynamics Simulations

Since silicon nitride (SiNx) film is more stable than SiO2, silicon nitride, thus it is widely used in semiconductor industry as an insulatorlayer. The study of nitrogenation process of a-Si was performed using molecular dynamics simulations to determine the properties of the bonds created in the structure of a-SiNx. Reactive force field (Reaxff) was used as potential in this molecular dynamic simulation owing to its ability to describe charge transfer as well as breaking and formation of atomic bonds. The structure of a-Si is obtained by melting the crystalline silicon at temperature of 3500 K followed by quenching to room temperature. The nitrogenation process was carried out by randomly distributing 900 N atoms over the a-Si surface for 60 ps at temperature varied from 300 K, 600 K, 900 K, and 1200 K. The higher the temperature nitrogenation applied in the system, the more number of N atoms adsorbed, resulting in a deeper penetration depth of Nitrogen atom. Amorphization and nitrogenation changed the distribution of coordination number of Ni, Si, and O atoms. Transfer of electrons from silicon to nitrogen occurs only in the nearest nitrogen atom with silicon atom.

scholarly journals Hydrogen in amorphous and microcrystalline silicon films prepared by hydrogen dilution

1996 ◽  
Vol 80 (9) ◽  
pp. 4971-4975 ◽  
Author(s):  
U. Kroll ◽  
J. Meier ◽  
A. Shah ◽  
S. Mikhailov ◽  
J. Weber
Keyword(s):  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Hydrogen Dilution

High Quality Microcrystalline Silicon-Carbide Films Prepared by Photo-CVD Method Using Ethylene Gas as a Carbon Source

1999 ◽  
Vol 557 ◽  
Author(s):  
Seung Yeop Myong ◽  
Hyung Kew Lee ◽  
Euisik Yoon ◽  
Koeng Su Lim
Keyword(s):  
Silicon Carbide ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Cvd Method ◽  
Hydrogen Dilution ◽  
Boron Doped

AbstractHydrogenated boron-doped microcrystalline silicon-carbide (p-μc-SiC:H) films were grown by a photo chemical vapor deposition (photo-CVD) method from silane (SiH4), hydrogen (H2), diborane (B2H6), and ethylene (C2H4) gases. Since the photo-CVD is a mild process (~10mW/cm2), we can avoid the ion damage of the film, which is inevitable during the deposition of μc-SiC:H employing conventional PECVD technique. A dark conductivity as high as 5 × 10-1 S/cm, together with an optical bandgap of 2 eV, was obtained by the C2H4 addition, which is the first approach in photo-CVD systems. From the Raman and FTIR spectra, it is clear that our p-μc-SiC:H films are made up of crystalline silicon grains embedded in amorphous silicon-carbide tissue. We investigate the role of the hydrogen dilution and ethylene addition on the electrical, optical, and structural properties of p-μc-SiC:H films.

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