Structural changes of hot-wire CVD silicon carbide thin films induced by gas flow rates

Thin Solid Films ◽

10.1016/j.tsf.2007.06.060 ◽

2008 ◽

Vol 516 (5) ◽

pp. 626-629 ◽

Author(s):

Akimori Tabata ◽

Masahiko Mori

Keyword(s):

Silicon Carbide ◽

Gas Flow ◽

Structural Changes ◽

Hot Wire ◽

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Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2005.07.134 ◽

2006 ◽

Vol 501 (1-2) ◽

pp. 102-106 ◽

Author(s):

T. Daimaru ◽

A. Tabata ◽

T. Mizutani

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Hot Wire ◽

Microcrystalline Silicon ◽

Silicon Thin Films ◽

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Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates

Applied Surface Science ◽

10.1016/j.apsusc.2013.08.075 ◽

2013 ◽

Vol 285 ◽

pp. 440-449 ◽

Author(s):

Clive J. Oliphant ◽

Christopher J. Arendse ◽

Theophillus F.G. Muller ◽

Dirk Knoesen

Keyword(s):

Silicon Nitride ◽

Gas Flow ◽

Hot Wire ◽

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Influence of N2 and H2 Gas Flow Rates on Properties of n-Type Nanocrystalline 3C-SiC:H Thin Films Prepared by Hot-Wire Chemical Vapor Deposition

ECS Meeting Abstracts ◽

10.1149/ma2009-02/34/2491 ◽

2009 ◽

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Hot Wire ◽

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Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2005.07.186 ◽

2006 ◽

Vol 501 (1-2) ◽

pp. 177-180 ◽

Author(s):

M. Mori ◽

A. Tabata ◽

T. Mizutani

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Hydrogen Gas ◽

Hot Wire ◽

Hydrogenated Amorphous

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Influence of N2 and H2 Gas Flow Rates on Properties of N-type Nanocrystalline 3C-SiC:H Thin Films Prepared by Hot-wire Chemical Vapor Deposition

ECS Transactions ◽

10.1149/1.3207592 ◽

2019 ◽

Vol 25 (8) ◽

pp. 207-212

Author(s):

Akimori Tabata ◽

Yoshiki Hoshide ◽

Akihiro Kondo

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gas Flow ◽

Chemical Vapor ◽

Hot Wire ◽

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Pressure dependent structural and optical properties of silicon carbide thin films deposited by hot wire chemical vapor deposition from pure silane and methane gases

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-012-0934-z ◽

2012 ◽

Vol 24 (4) ◽

pp. 1361-1368 ◽

Author(s):

Fatemeh Shariatmadar Tehrani ◽

Boon Tong Goh ◽

Muhamad Rasat Muhamad ◽

Saadah Abdul Rahman

Keyword(s):

Silicon Carbide ◽

Optical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Structural And Optical Properties

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Hot wire chemical vapor deposited multiphase silicon carbide (SiC) thin films at various filament temperatures

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-016-4995-2 ◽

2016 ◽

Vol 27 (12) ◽

pp. 12340-12350 ◽

Author(s):

Amit Pawbake ◽

Vaishali Waman ◽

Ravindra Waykar ◽

Ashok Jadhavar ◽

Ajinkya Bhorde ◽

...

Keyword(s):

Silicon Carbide ◽

Chemical Vapor ◽

Hot Wire ◽

Chemical Vapor Deposited

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XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

Nanoscale Research Letters ◽

10.1186/s11671-016-1769-y ◽

2017 ◽

Vol 12 (1) ◽

Author(s):

M. Baseer Haider

Keyword(s):

Magnetron Sputtering ◽

Depth Profile ◽

Gas Flow ◽

Profile Analysis ◽

Rf Magnetron Sputtering ◽

Depth Profile Analysis ◽

Ar Gas ◽

Xps Depth Profile

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Effects of total gas flow rates on the high rate growth microcrystalline silicon thin films

2008 33rd IEEE Photovolatic Specialists Conference ◽

10.1109/pvsc.2008.4922805 ◽

2008 ◽

Author(s):

Xiaoyan Han ◽

Guofu Hou ◽

Guijun Li ◽

Xiaodan Zhang ◽

Jianjun Zhang ◽

...

Keyword(s):

Gas Flow ◽

High Rate ◽

Microcrystalline Silicon ◽

Silicon Thin Films

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Preparation of Nanocrystalline Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at Various Filament Temperature

2006 IEEE 4th World Conference on Photovoltaic Energy Conference ◽

10.1109/wcpec.2006.279805 ◽

2006 ◽

Author(s):

Akimori Tabata ◽

Yusuke Komura ◽

Masaki Kanaya ◽

Tomoki Narita ◽

Akihiro Kondo ◽

...

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Filament Temperature ◽

Nanocrystalline Silicon Carbide

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