Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

2008 ◽  
Vol 516 (16) ◽  
pp. 5612-5617 ◽  
Author(s):  
C.C. Kuo ◽  
C.C. Liu ◽  
C.C. Lin ◽  
Y.Y. Liou ◽  
J.L. He ◽  
...  
2013 ◽  
Vol 103 (26) ◽  
pp. 263901 ◽  
Author(s):  
Dong Uk Lee ◽  
Seon Pil Kim ◽  
Kyoung Su Lee ◽  
Sang Woo Pak ◽  
Eun Kyu Kim

2011 ◽  
Vol 194-196 ◽  
pp. 1217-1220
Author(s):  
Kessaraporn Wathanyu ◽  
Siriporn Rojananan

The aim of this paper is to study the microstructures and hardness of silver alloys after internal oxidation process. The Ag-5Sn and Ag-5Cu alloys were prepared by melting and cast into ingots and then they were internal oxidized at the temperature range from 550 to 750°C, for 24 hours under oxidizing atmosphere by feeding oxygen gas with the pressure of 1 kg/cm2, gas flow rate 5 l/min and cooled in the furnace. The microstructures, Vickers microhardness and phase compositions were investigated. The results showed that the microstructures of the based metal revealed dendritic structure and they were transformed to equiaxed grains after internal oxidation. The internally oxidized layer of Ag-5Sn alloy is SnO2 with the hardness about 106-133 HV. The internally oxidized layer of Ag-5Cu alloy is CuO with the hardness about 65-73 HV.


2012 ◽  
Vol 32 ◽  
pp. 752-758 ◽  
Author(s):  
C. Chananonnawathorn ◽  
S. Pudwat ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
P. Limnontakul ◽  
...  

2019 ◽  
Vol 27 (07) ◽  
pp. 1950183
Author(s):  
AREZOO MOSHABAKI ◽  
ERFAN KADIVAR ◽  
ALIREZA FIROOZIFAR

Indium tin oxide (ITO) thin films have been deposited on glass substrate by DC magnetron sputtering in the presence and absence of oxygen gas flux. Subsequently, some of the samples have been annealed in vacuum or air oven at [Formula: see text]C for 20[Formula: see text]min. The optical, surface morphology and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, four-point probe and Hall effect measurements as a function of argon gas flux, film thickness, deposition rate and substrate temperature. Experimental results indicate that the surface roughness increases by decreasing the argon gas flow rate and deposition rate. The result revealed that the lowest surface roughness of 1.07[Formula: see text]nm is achieved at zero oxygen gas flux, argon gas flow 20[Formula: see text]sccm and deposition rate [Formula: see text] Å/s. We have found that the maximum value of merit figure is related to the argon gas flow rate 30[Formula: see text]sccm. In order to obtain a very smooth surface, finally, the ITO thin films have been processed with alumina polishing solution by ultrasonic method. Our experimental results indicate that surface roughness decreases and merit figure increases after polishing process.


Author(s):  
Wenbin Huang ◽  
Juan Yang ◽  
Haibo Meng ◽  
Xu Xia ◽  
Yuliang Fu ◽  
...  

To increase the ion current from the ion source is an important way to improve the performance of the electron cyclotron resonance ion thruster(ECRIT). The ion migration distance, magnetic topology and propellant have a close influence on the extracting ion beam. This influence is studied through both magnetic circuit structure calculation and experiments, by using an ion source with different gate mounting positions and magnet lengths. Experimental results show that the distribution of the ECR region will be discontinuous when the length of the magnet is too short. This will greatly reduce the performance of the ion source. To increase the length of the magnet is beneficial to the beam emission at high gas flow rate, but it reduces the beam emission at low gas flow rate. The effect of the ion migration distance on the ion beam is related to the plasma density in the ion source. When the gas flow rate is low, a longer gate mounting ring is beneficial to increase the ion current. When the gas flow rate is high, the different magnetic topology will cause the gate mounting ring which influences on the ion current. At low gas flow conditions, xenon gas can significantly improve the discharge stability of the ion source and increase the ion current. However, at high gas flow rate, the concentration effect of the neutral particles is too strong that affects the energy accumulation process of the free electrons. This would cause the decrease in the ion current.


Sign in / Sign up

Export Citation Format

Share Document