A Study on the Electrical Properties of ITO Thin Films with Various Oxygen Gas Flow Rate

Indium tin oxide (ITO) thin films have been deposited on glass substrate by DC magnetron sputtering in the presence and absence of oxygen gas flux. Subsequently, some of the samples have been annealed in vacuum or air oven at [Formula: see text]C for 20[Formula: see text]min. The optical, surface morphology and electrical characteristics have been examined by spectrophotometry, atomic force microscope, field emission scanning electron microscopy, four-point probe and Hall effect measurements as a function of argon gas flux, film thickness, deposition rate and substrate temperature. Experimental results indicate that the surface roughness increases by decreasing the argon gas flow rate and deposition rate. The result revealed that the lowest surface roughness of 1.07[Formula: see text]nm is achieved at zero oxygen gas flux, argon gas flow 20[Formula: see text]sccm and deposition rate [Formula: see text] Å/s. We have found that the maximum value of merit figure is related to the argon gas flow rate 30[Formula: see text]sccm. In order to obtain a very smooth surface, finally, the ITO thin films have been processed with alumina polishing solution by ultrasonic method. Our experimental results indicate that surface roughness decreases and merit figure increases after polishing process.

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Effect of oxygen gas flow rate on phase transformation and morphology of vanadium oxide thin films

Materials Today Proceedings ◽

10.1016/j.matpr.2018.02.031 ◽

2018 ◽

Vol 5 (6) ◽

pp. 13870-13873 ◽

Cited By ~ 1

Author(s):

T. Rattana ◽

S. Suwanboon ◽

C. Kedkaew

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Vanadium Oxide ◽

Flow Rate ◽

Gas Flow ◽

Gas Flow Rate ◽

Oxide Thin Films ◽

Oxygen Gas ◽

Effect Of Oxygen ◽

Vanadium Oxide Thin Films

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Effects of oxygen-gas flow rate on lattice dynamics and microstructure for Ga-doped ZnO thin films prepared by reactive plasma deposition

Superlattices and Microstructures ◽

10.1016/j.spmi.2005.08.007 ◽

2005 ◽

Vol 38 (4-6) ◽

pp. 369-376 ◽

Cited By ~ 12

Author(s):

T. Yamamoto ◽

T. Mitsunaga ◽

M. Osada ◽

K. Ikeda ◽

S. Kishimoto ◽

...

Keyword(s):

Thin Films ◽

Flow Rate ◽

Lattice Dynamics ◽

Gas Flow ◽

Plasma Deposition ◽

Zno Thin Films ◽

Gas Flow Rate ◽

Reactive Plasma ◽

Oxygen Gas ◽

Doped Zno

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Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Nanomaterials ◽

10.3390/nano11071635 ◽

2021 ◽

Vol 11 (7) ◽

pp. 1635

Author(s):

Md. Akhtaruzzaman ◽

Md. Shahiduzzaman ◽

Nowshad Amin ◽

Ghulam Muhammad ◽

Mohammad Aminul Islam ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Flow Rate ◽

Gas Flow ◽

Rf Magnetron Sputtering ◽

Gas Flow Rate ◽

Flow Rates ◽

Ar Gas

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

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Dependence of the NH3 Gas Flow Rate on the Electrical Properties of p-Type ZnO Thin Films Prepared by Using Atomic Layer Epitaxy

Journal of the Korean Physical Society ◽

10.3938/jkps.50.590 ◽

2007 ◽

Vol 50 (3) ◽

pp. 590 ◽

Cited By ~ 7

Author(s):

Chongmu Chongmu ◽

Su Young ◽

Jongmin Jongmin

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Flow Rate ◽

Gas Flow ◽

Atomic Layer ◽

Atomic Layer Epitaxy ◽

Zno Thin Films ◽

Gas Flow Rate ◽

P Type

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Fabrication of Cu-rich CZTS thin films by two-stage process: Effect of gas flow-rate in sulfurization process

Journal of Molecular Structure ◽

10.1016/j.molstruc.2021.129922 ◽

2021 ◽

Vol 1230 ◽

pp. 129922

Author(s):

M.A. Olgar ◽

A. Altuntepe ◽

S. Erkan ◽

R. Zan

Keyword(s):

Thin Films ◽

Flow Rate ◽

Gas Flow ◽

Gas Flow Rate ◽

Two Stage ◽

Sulfurization Process ◽

Stage Process ◽

Czts Thin Films

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Effects of fluorine incorporation on the structural and electrical properties of Diamond-like carbon

MRS Proceedings ◽

10.1557/opl.2015.306 ◽

2015 ◽

Vol 1734 ◽

Author(s):

Kento Nakanishi ◽

Jun Otsuka ◽

Masanori Hiratsuka ◽

Chen Chung Du ◽

Akira Shirakura ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Electrical Properties ◽

Flow Rate ◽

Gas Flow ◽

Diamond Like Carbon ◽

Gas Flow Rate ◽

Sheet Resistivity ◽

Nitrogen Doped ◽

Structural And Electrical Properties

ABSTRACTDiamond-like carbon (DLC) has widespread attention as a new material for its application to thin film solar cells and other semiconducting devices. DLC can be produced at a lower cost than amorphous silicon, which is utilized for solar cells today. However, the electrical properties of DLC are insufficient for this purpose because of many dangling bonds in DLC. To solve this problem, we investigated the effects of the fluorine incorporation on the structural and electrical properties of DLC.We prepared five kinds of fluorinated DLC (F-DLC) thin film with different amounts of fluorine. Films were deposited by the radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. C6H6 and C6HF5 were used as source gases. The total gas flow rate was constant and the gas flow rate ratio R (=C6H6 / (C6H6 + C6HF5)) was changed from 0 to 1 in 0.25 ratio steps. We also prepared nitrogen doped DLC (F-DLC) on p-Si using N2 gas as a doping gas to form nitrogen doped DLC (F-DLC) / p-Si heterojunction diodes.X-ray photoelectron spectroscopy (XPS) showed that fluorine concentration in the DLC films was controlled. Moreover, the XPS analysis of the C1s spectrum at R=2/4 showed the presence of CF bonding. At R=1, CF2 bonding was observed in addition to CF bonding. The sheet resistivity of the films changed from 3.07×1012 to 4.86×109 Ω. The minimum value was obtained at R=2/4. The current-voltage characteristics indicated that nitrogen doped F-DLC of 2/4 and p-Si heterojunction diode exhibited the best rectification characteristics and its energy conversion efficiency had been maximized. This is because of a decrease of dangling bonds density by ESR analysis and an increase of sp2 structures by Raman analysis. When the fluorine is over certain content, the sheet resistivity increases because chain structures become larger, which is due to the CF2 bonding in F-DLC prevents ring structures. Many C2F4 species were observed and it may become precursors of the chain structure domains, such as (CF2)n.In this study, we revealed effects of fluorine incorporation on DLC and succeeded in increasing its conductivity and improving rectification characteristics of DLC/ p-Si hetero-junction diodes. Our results indicate that DLC fluorination is effective for the semiconducting material, such as solar cell applications.

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A Study on the Effect of Process Parameters on Surface Topography of Al Thin Films on Various Substrates Using AFM

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.383-390.903 ◽

2011 ◽

Vol 383-390 ◽

pp. 903-908

Author(s):

S. Shanmugan ◽

D. Mutharasu ◽

Z. Hassan ◽

H. Abu. Hassan

Keyword(s):

Thin Films ◽

Surface Topography ◽

Flow Rate ◽

Gas Flow ◽

Process Conditions ◽

Gas Flow Rate ◽

Glass Substrates ◽

Sputtering Power ◽

Large Particles ◽

Ar Gas

Al thin films were prepared over different substrates at various process conditions using DC sputtering. The surface topography of all prepared films was examined using AFM technique. Very smooth, uniform and dense surface were observed for Al films coated over Glass substrates. The observed particle size was nano scale (20 -70 nm) for Glass substrates. Sputtering power showed immense effect on surface roughness with respective to Ar gas flow rate. Noticeable change on surface with large particles was observed in Copper substrates at various sputtering power and gas flow rate.

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