Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space

2008 ◽  
Vol 516 (22) ◽  
pp. 8022-8028 ◽  
Author(s):  
V. Holý ◽  
K. Mundboth ◽  
C. Mokuta ◽  
T.H. Metzger ◽  
J. Stangl ◽  
...  
1997 ◽  
Vol 306 (2) ◽  
pp. 198-204 ◽  
Author(s):  
A.A. Darhuber ◽  
J. Stangl ◽  
V. Holy ◽  
G. Bauer ◽  
A. Krost ◽  
...  

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  

1998 ◽  
Vol 2 (1-4) ◽  
pp. 789-793 ◽  
Author(s):  
A.A Darhuber ◽  
V Holy ◽  
P Schittenhelm ◽  
J Stangl ◽  
I Kegel ◽  
...  

2018 ◽  
Vol 2 (4) ◽  
pp. 24 ◽  
Author(s):  
Anton Davydok ◽  
Thomas Cornelius ◽  
Zhe Ren ◽  
Cedric Leclere ◽  
Gilbert Chahine ◽  
...  

The three-point bending behavior of a single Au nanowire deformed by an atomic force microscope was monitored by coherent X-ray diffraction using a sub-micrometer sized hard X-ray beam. Three-dimensional reciprocal-space maps were recorded before and after deformation by standard rocking curves and were measured by scanning the energy of the incident X-ray beam during deformation at different loading stages. The mechanical behavior of the nanowire was visualized in reciprocal space and a complex deformation mechanism is described. In addition to the expected bending of the nanowire, torsion was detected. Bending and torsion angles were quantified from the high-resolution diffraction data.


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