The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

2009 ◽  
Vol 517 (23) ◽  
pp. 6334-6336 ◽  
Author(s):  
Ch. Wenger ◽  
M. Lukosius ◽  
G. Weidner ◽  
H.-J. Müssig ◽  
S. Pasko ◽  
...  
2013 ◽  
Vol 102 (17) ◽  
pp. 173501 ◽  
Author(s):  
Alexander C. Kozen ◽  
Marshall A. Schroeder ◽  
Kevin D. Osborn ◽  
C. J. Lobb ◽  
Gary W. Rubloff

2008 ◽  
Vol 104 (5) ◽  
pp. 054510 ◽  
Author(s):  
Bing Miao ◽  
Rajat Mahapatra ◽  
Nick Wright ◽  
Alton Horsfall

2013 ◽  
Vol 25 (9) ◽  
pp. 1301-1308 ◽  
Author(s):  
Prakash Periasamy ◽  
Harvey L. Guthrey ◽  
Aziz I. Abdulagatov ◽  
Paul F. Ndione ◽  
Joseph J. Berry ◽  
...  

2021 ◽  
Author(s):  
Kisung Chae ◽  
Andrew C Kummel ◽  
Kyeongjae Cho

Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxide stack models for both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the...


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