Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors

Applied Physics Letters ◽

10.1063/1.2719618 ◽

2007 ◽

Vol 90 (14) ◽

pp. 142906 ◽

Author(s):

P. Gonon ◽

C. Vallée

Keyword(s):

Metal Insulator ◽

High K ◽

Metal Insulator Metal ◽

Capacitance Voltage

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Atomic Layer Deposition of High-k and Nanolaminate Dielectrics for Transparent Thin Film Transistors and Metal/Insulator/Metal Tunnel Diodes

ECS Meeting Abstracts ◽

10.1149/ma2011-01/22/1369 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Tunnel Diodes ◽

Metal Insulator ◽

Layer Deposition ◽

High K ◽

Metal Insulator Metal

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Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors

Applied Physics Letters ◽

10.1063/1.2803221 ◽

2007 ◽

Vol 91 (17) ◽

pp. 172909 ◽

Author(s):

F. El Kamel ◽

P. Gonon ◽

C. Vallée

Keyword(s):

Experimental Evidence ◽

Oxygen Vacancies ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin Solid Films ◽

10.1016/j.tsf.2013.03.045 ◽

2013 ◽

Vol 536 ◽

pp. 68-73 ◽

Author(s):

A. Abrutis ◽

M. Lukosius ◽

M. Skapas ◽

S. Stanionyte ◽

V. Kubilius ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal ◽

Metal Organic ◽

Organic Precursors ◽

High K Dielectric ◽

Organic Chemical Vapor Deposition

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WITHDRAWN: Tailored cerium-aluminate high-k dielectric thin films for metal–insulator–metal device applications

Thin Solid Films ◽

10.1016/j.tsf.2009.12.008 ◽

2009 ◽

Author(s):

Rakesh Sohal ◽

Grzegorz Lupina ◽

Peter Zaumseil ◽

Thomas Schroeder

Keyword(s):

Metal Insulator ◽

Dielectric Thin Films ◽

High K ◽

Metal Insulator Metal ◽

Device Applications ◽

High K Dielectric

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The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

Journal of Applied Physics ◽

10.1063/1.2973687 ◽

2008 ◽

Vol 104 (5) ◽

pp. 054510 ◽

Author(s):

Bing Miao ◽

Rajat Mahapatra ◽

Nick Wright ◽

Alton Horsfall

Keyword(s):

Leakage Current ◽

Metal Insulator ◽

Carbon Contamination ◽

High K ◽

Metal Insulator Metal

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Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity

Electronics Letters ◽

10.1049/el.2011.3849 ◽

2012 ◽

Vol 48 (4) ◽

pp. 230 ◽

Author(s):

S. Monaghan ◽

I.M. Povey

Keyword(s):

Metal Insulator ◽

Low Leakage ◽

High K ◽

Metal Insulator Metal

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Experimental Study of 1/f1+α Noise in Transient Leakage Current of Metal–Insulator–Metal With Stacked High-k Polycrystalline Films

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.2988440 ◽

2020 ◽

Vol 67 (6) ◽

pp. 2503-2509

Author(s):

Hsin-Jyun Lin ◽

Koji Akiyama ◽

Yoshihiro Hirota ◽

Yasushi Akasaka ◽

Genji Nakamura ◽

...

Keyword(s):

Experimental Study ◽

Leakage Current ◽

Polycrystalline Films ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal

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In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal–insulator–metal capacitors integrated in back-end of line of integrated circuits

IET Microwaves Antennas & Propagation ◽

10.1049/iet-map:20070344 ◽

2008 ◽

Vol 2 (8) ◽

pp. 781-788 ◽

Author(s):

T.T. Vo ◽

T. Lacrevaz ◽

A. Farcy ◽

C. Bermond ◽

J. Torres ◽

...

Keyword(s):

Integrated Circuits ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal

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Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.07.016 ◽

2015 ◽

Vol 40 ◽

pp. 516-522 ◽

Author(s):

H.K. Sung ◽

C. Wang ◽

N.Y. Kim

Keyword(s):

Surface Morphology ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal

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Reliability of Al2O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Journal of Applied Physics ◽

10.1063/1.3520666 ◽

2010 ◽

Vol 108 (12) ◽

pp. 124104 ◽

Author(s):

Dayu Zhou ◽

U. Schroeder ◽

Jin Xu ◽

J. Heitmann ◽

G. Jegert ◽

...

Keyword(s):

Three Dimensional ◽

Metal Insulator ◽

High K ◽

Metal Insulator Metal

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