Understanding capacitance-voltage nonlinearities in microelectronic metal-insulator-metal (MIM) capacitors

2015 ◽  
Author(s):  
P. Gonon ◽  
C. Vallee
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Capacitance Voltage ◽  
Mim Capacitors

Modeling of Field Dependent Maxwell-Wagner Interfacial Capacitance for Bilayer Metal-Insulator-Metal (MIM) Capacitors

2018 ◽  
Vol 24 (8) ◽  
pp. 6008-6012
Author(s):  
D Kannadassan ◽  
Kadiyam Rajshekar ◽  
Dudekula Shaikshavali ◽  
Aparna Sanal ◽  
Maryam Shojaei Baghini ◽  
...  
Keyword(s):  
Digital Circuits ◽  
Metal Insulator ◽  
Low Frequencies ◽  
Proposed Model ◽  
Metal Insulator Metal ◽  
Capacitance Voltage ◽  
Field Dependent ◽  
Interfacial Capacitance ◽  
Analog And Digital Circuits ◽  
Mim Capacitors

In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer Metal-Insulator-Metal (MIM) capacitors. The model was verified with measured capacitance–voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10 kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

State-of-the-Art Inkjet-Printed Metal-Insulator-Metal (MIM) Capacitors on Silicon Substrate

2015 ◽  
Vol 25 (1) ◽  
pp. 13-15 ◽  
Author(s):  
Chiara Mariotti ◽  
Benjamin S. Cook ◽  
Luca Roselli ◽  
Manos M. Tentzeris
Keyword(s):  
Silicon Substrate ◽  
State Of The Art ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors
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