Hafnium-Zirconium Oxide Interface Models with Semiconductor and Metal for Ferroelectric Devices
Keyword(s):
Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxide stack models for both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the...
2012 ◽
Vol 77
(22)
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pp. 10093-10104
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2008 ◽
Vol 129
(21)
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pp. 214105
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Keyword(s):
2012 ◽
Vol 116
(5)
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pp. 3457-3466
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2012 ◽
Vol 116
(27)
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pp. 7787-7794
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2016 ◽
Vol 659
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pp. 159-163
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