Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

2010 ◽  
Vol 518 (17) ◽  
pp. 4791-4797 ◽  
Author(s):  
Tuquabo Tesfamichael ◽  
Masashi Arita ◽  
Thor Bostrom ◽  
John Bell
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Tungsten Oxide ◽  
Gas Sensors ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Iron Doped

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

scholarly journals Description and characterization of a ECR plasma device developed for thin film deposition

2003 ◽  
Vol 33 (1) ◽  
pp. 123-127 ◽  
Author(s):  
J.A.S. da Matta ◽  
R.M.O. Galvão ◽  
L. Ruchko ◽  
M.C.A. Fantini ◽  
P.K. Kiyohara
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Plasma Device

Characterization of step-edge barrier crossing of para-sexiphenyl on the ZnO (101̄0) surface

2016 ◽  
Vol 18 (36) ◽  
pp. 25329-25341 ◽  
Author(s):  
Karol Palczynski ◽  
Philipp Herrmann ◽  
Georg Heimel ◽  
Joachim Dzubiella
Keyword(s):  
Thin Film ◽  
Mass Transport ◽  
Organic Molecules ◽  
Optoelectronic Devices ◽  
Thin Film Deposition ◽  
Essential Elements ◽  
Transport Processes ◽  
Film Deposition ◽  
Conjugated Organic Molecules

Mass transport processes of conjugated organic molecules (COMs) on inorganic surfaces are essential elements in thin film deposition for hybrid optoelectronic devices.

Modular Electron Beam Source for Thin Film Deposition

1966 ◽  
Vol 37 (10) ◽  
pp. 1421-1422 ◽  
Author(s):  
K. L. Chopra ◽  
M. R. Randlett
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Beam Source

Sol–gel thin film deposition and characterization of a new optically active compound: Er2Ti2O7

2001 ◽  
Vol 16 (4) ◽  
pp. 463-473 ◽  
Author(s):  
M. Langlet ◽  
C. Coutier ◽  
J. Fick ◽  
M. Audier ◽  
W. Meffre ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Compound ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Optically Active ◽  
Film Deposition
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