Characterization of step-edge barrier crossing of para-sexiphenyl on the ZnO (101̄0) surface

2016 ◽  
Vol 18 (36) ◽  
pp. 25329-25341 ◽  
Author(s):  
Karol Palczynski ◽  
Philipp Herrmann ◽  
Georg Heimel ◽  
Joachim Dzubiella
Keyword(s):  
Thin Film ◽  
Mass Transport ◽  
Organic Molecules ◽  
Optoelectronic Devices ◽  
Thin Film Deposition ◽  
Essential Elements ◽  
Transport Processes ◽  
Film Deposition ◽  
Conjugated Organic Molecules

Mass transport processes of conjugated organic molecules (COMs) on inorganic surfaces are essential elements in thin film deposition for hybrid optoelectronic devices.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

scholarly journals Description and characterization of a ECR plasma device developed for thin film deposition

2003 ◽  
Vol 33 (1) ◽  
pp. 123-127 ◽  
Author(s):  
J.A.S. da Matta ◽  
R.M.O. Galvão ◽  
L. Ruchko ◽  
M.C.A. Fantini ◽  
P.K. Kiyohara
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Plasma Device

Sol–gel thin film deposition and characterization of a new optically active compound: Er2Ti2O7

2001 ◽  
Vol 16 (4) ◽  
pp. 463-473 ◽  
Author(s):  
M. Langlet ◽  
C. Coutier ◽  
J. Fick ◽  
M. Audier ◽  
W. Meffre ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Compound ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Optically Active ◽  
Film Deposition

Characterization of thin-film deposition in a pulsed acrylic acid polymerizing discharge

2007 ◽  
Vol 25 (4) ◽  
pp. 1093-1097 ◽  
Author(s):  
Sergey A. Voronin ◽  
James W. Bradley ◽  
Catalin Fotea ◽  
Mischa Zelzer ◽  
Morgan R. Alexander
Keyword(s):  
Thin Film ◽  
Acrylic Acid ◽  
Thin Film Deposition ◽  
Film Deposition

Characterization of remote inductively coupled CH4–N2 plasma for carbon nitride thin-film deposition

2005 ◽  
Vol 98 (4) ◽  
pp. 043308 ◽  
Author(s):  
Hyungtak Seo ◽  
Jung-Hyung Kim ◽  
Kwang-Hwa Chung ◽  
Ju Youn Kim ◽  
Seok Hoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nitride ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Inductively Coupled ◽  
N2 Plasma

scholarly journals CISSY: A station for preparation and surface/interface analysis of thin film materials and devices

2016 ◽  
Vol 2 ◽  
Author(s):  
Iver Lauermann ◽  
Alexander Steigert
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Fabrication And Characterization ◽  
X Ray Absorption ◽  
Thin Film Devices

The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient-pressure methods) with surface and bulk-sensitive analysis (photo emission, x-ray emission, x-ray absorption) in the same UHV system, allowing fast and contamination–free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water-splitting devices and other functional thin film materials.

Pulsed ion beam characterization of CVD diamond surfaces under thin film deposition conditions

1995 ◽  
Vol 270 (1-2) ◽  
pp. 130-136 ◽  
Author(s):  
A.R. Krauss ◽  
J. Im ◽  
J.A. Schultz ◽  
V.S. Smentkowski ◽  
K. Waters ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Cvd Diamond ◽  
Film Deposition ◽  
Diamond Surfaces ◽  
Beam Characterization ◽  
Deposition Conditions
Sign in / Sign up

Export Citation Format

Share Document