Embedding of reduced pressure-chemical vapor deposition grown Ge nanocrystals in a high quality SiO2 matrix for non-volatile memory applications

2010 ◽  
Vol 518 (19) ◽  
pp. 5382-5386 ◽  
Author(s):  
L. Masarotto ◽  
K. Yckache ◽  
A. Fanton ◽  
F. Aussenac ◽  
F. Fillot
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Sio2 Matrix ◽  
Reduced Pressure ◽  
Non Volatile Memory ◽  
Pressure Chemical ◽  
Memory Applications ◽  
Ge Nanocrystals

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

scholarly journals Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

2019 ◽  
Author(s):  
Y. Yamamoto ◽  
O. Skibitzki ◽  
M.A. Schubert ◽  
M. Scuderi ◽  
F. Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Pressure Chemical ◽  
Multi Quantum Well

Ge/SiGe multiple quantum well fabrication by reduced-pressure chemical vapor deposition

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGK10
Author(s):  
Yuji Yamamoto ◽  
Oliver Skibitzki ◽  
Markus Andreas Schubert ◽  
Mario Scuderi ◽  
Felix Reichmann ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Reduced Pressure ◽  
Pressure Chemical

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

2016 ◽  
Vol 602 ◽  
pp. 24-28
Author(s):  
Yuji Yamamoto ◽  
Naofumi Ueno ◽  
Masao Sakuraba ◽  
Junichi Murota ◽  
Andreas Mai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Delta Doping ◽  
Pressure Chemical
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