Aluminum-induced crystallization of amorphous silicon films deposited by hot wire chemical vapor deposition on glass substrates

2010 ◽  
Vol 519 (1) ◽  
pp. 178-183 ◽  
Author(s):  
Ozgenc Ebil ◽  
Roger Aparicio ◽  
Robert Birkmire
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Glass Substrates ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Deposition of amorphous silicon films by hot-wire chemical vapor deposition

1999 ◽  
Vol 85 (9) ◽  
pp. 6843-6852 ◽  
Author(s):  
K. F. Feenstra ◽  
R. E. I. Schropp ◽  
W. F. Van der Weg
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire

scholarly journals A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

10.30544/128 ◽  
2015 ◽  
Vol 21 (1) ◽  
pp. 7-14
Author(s):  
Meysam Zarchi ◽  
Shahrokh Ahangarani
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Intrinsic Stress ◽  
Hot Wire ◽  
Microcrystalline Silicon

The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs) has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD) and hot-wire chemical vapor deposition (HW-CVD) at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50%) can be deposited by HW-CVD all the way down to room temperature.

Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates

1997 ◽  
Vol 70 (20) ◽  
pp. 2714-2716 ◽  
Author(s):  
V. Chu ◽  
J. Jarego ◽  
H. Silva ◽  
T. Silva ◽  
M. Reissner ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Thin Film ◽  
Glass Substrates

Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass

2007 ◽  
Vol 989 ◽  
Author(s):  
Charles W. Teplin ◽  
Howard M. Branz ◽  
Kim M. Jones ◽  
Manuel J. Romero ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Glass Substrates ◽  
Thin Polycrystalline ◽  
Induced Crystallization ◽  
Low Temperature Process

AbstractDuring the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (~10 µm) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 µm of epitaxy at ~670°C.

Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition

2011 ◽  
Vol 519 (14) ◽  
pp. 4609-4612 ◽  
Author(s):  
Nagsen P. Meshram ◽  
Alka Kumbhar ◽  
R.O. Dusane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanowire ◽  
Chemical Vapor ◽  
Nanowire Growth ◽  
Hot Wire ◽  
Glass Substrates

Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
Charles W. Teplin ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert Reedy ◽  
Bobby To ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Silicon Films ◽  
Hot Wire ◽  
Transmission Electron ◽  
Increasing Temperature

AbstractWe have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (<1018 cm-3). The hydrogen concentration is found to increase substantially with film thickness from 5·1018 to 5·1019 cm-3, likely due to the incorporation of hydrogen into the a-Si:H cones that grow after the breakdown of epitaxy.

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