Two dimensional control of electron beam induced orientation selective epitaxial growth of (100) and (110)CeO2 regions on Si(100) substrates

2011 ◽  
Vol 519 (17) ◽  
pp. 5775-5779 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Nobuyuki Igarashi ◽  
Yuki Kanno ◽  
Shigenari Shida
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Two Dimensional ◽  
Dimensional Control ◽  
Selective Epitaxial Growth

Properties and Mechanism of Si Selective Epitaxial Growth on Al2O3using Electron Beam Irradiation

1993 ◽  
Vol 32 (Part 1, No. 6A) ◽  
pp. 2582-2586 ◽  
Author(s):  
Makoto Ishida ◽  
Takashi Tomita ◽  
Masahiko Fujita ◽  
Tetsuro Nakamura
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Selective Epitaxial Growth

Epitaxial Growth of NiSi2 and CoSi2 on Laterally Confined Silicon by Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
H.F. Hsu ◽  
J.J. Chu ◽  
L.J. Chen
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Two Dimensional ◽  
Geometrical Configuration ◽  
Lateral Confinement ◽  
Stress Levels

ABSTRACTEpitaxial growth of NiSi2 and CoSi2 on silicon inside miniature oxide openings by rapid thermal annealing has been studied. Effects of lateral confinement, including two-dimensional and linear oxide openings, as well as deposition methods on the growth of NiSi2 and CoSi2 on silicon were investigated. Vast difference found in the behaviors of the growth of epitaxy inside oxide openings between samples with the metal films deposited by electron beam evaporation and sputtering are attributed to the differences in the geometrical configuration of the films and stress levels as well as surface cleanliness.

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