Controllable band-gap engineering of the ternary MgxNi1−xO thin films deposited by radio frequency magnetron sputtering for deep ultra-violet optical devices

2013 ◽  
Vol 529 ◽  
pp. 417-420 ◽  
Author(s):  
Yong Hun Kwon ◽  
Sung Hyun Chun ◽  
Hyung Koun Cho
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Ultra Violet ◽  
Optical Devices ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Band Gap Engineering

Transparent Conductive In-doped Cd3TeO6 Thin Films with Perovskite Structure Deposited by Radio Frequency Magnetron Sputtering

2005 ◽  
Vol 20 (9) ◽  
pp. 2256-2260 ◽  
Author(s):  
Hiroyuki Tetsuka ◽  
Yue Jin Shan ◽  
Keitaro Tezuka ◽  
Hideo Imoto ◽  
Kiyotaka Wasa
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Indium Tin Oxide ◽  
Optical Band Gap ◽  
Visible Region ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Average Transmittance

Transparent conductive In-doped Cd3TeO6 thin films were deposited on silica glass substrate by radio frequency magnetron sputtering using targets composed of CdO, TeO2, and In2O3 powders, and their electrical and optical properties were examined. The electrical resistivity of 3.2 × 10−3 Ωcm and an average transmittance above 80% in the visible region (400–800 nm) were obtained for the films deposited at the substrate temperature above 300 °C. The maximum optical band gap was 3.92 eV for the film deposited at 700 °C, demonstrating a large optical band gap comparable to indium tin oxide.

Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1105 ◽  
pp. 74-77 ◽  
Author(s):  
Xiao Lin Ji ◽  
Hai Dong Ju ◽  
Tao Yu Zou ◽  
Jin Long Luo ◽  
Kun Quan Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Optical Band Gap ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sputtering Pressure

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.

Nitrogen Doping into Cu2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2765-2768 ◽  
Author(s):  
Shogo Ishizuka ◽  
Shinya Kato ◽  
Takahiro Maruyama ◽  
Katsuhiro Akimoto
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nitrogen Doping ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Cu2o Thin Films

scholarly journals Radio frequency magnetron sputtering of Li7La3Zr2O12 thin films for solid-state batteries

2016 ◽  
Vol 307 ◽  
pp. 684-689 ◽  
Author(s):  
S. Lobe ◽  
C. Dellen ◽  
M. Finsterbusch ◽  
H.-G. Gehrke ◽  
D. Sebold ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Solid State Batteries
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