Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1105 ◽  
pp. 74-77 ◽  
Author(s):  
Xiao Lin Ji ◽  
Hai Dong Ju ◽  
Tao Yu Zou ◽  
Jin Long Luo ◽  
Kun Quan Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Optical Band Gap ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sputtering Pressure

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputtering pressure becomes smoother than that of Cu3N thin film deposited at low sputtering pressure.

Transparent Conductive In-doped Cd3TeO6 Thin Films with Perovskite Structure Deposited by Radio Frequency Magnetron Sputtering

2005 ◽  
Vol 20 (9) ◽  
pp. 2256-2260 ◽  
Author(s):  
Hiroyuki Tetsuka ◽  
Yue Jin Shan ◽  
Keitaro Tezuka ◽  
Hideo Imoto ◽  
Kiyotaka Wasa
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Band Gap ◽  
Indium Tin Oxide ◽  
Optical Band Gap ◽  
Visible Region ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Average Transmittance

Transparent conductive In-doped Cd3TeO6 thin films were deposited on silica glass substrate by radio frequency magnetron sputtering using targets composed of CdO, TeO2, and In2O3 powders, and their electrical and optical properties were examined. The electrical resistivity of 3.2 × 10−3 Ωcm and an average transmittance above 80% in the visible region (400–800 nm) were obtained for the films deposited at the substrate temperature above 300 °C. The maximum optical band gap was 3.92 eV for the film deposited at 700 °C, demonstrating a large optical band gap comparable to indium tin oxide.

Surface Morphology and Interface Reaction of Cu/SiO2/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering

2012 ◽  
Vol 487 ◽  
pp. 697-700
Author(s):  
Bo Cao ◽  
Tong Rui Yang ◽  
Gong Ping Li
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Interface Reaction ◽  
Radio Frequency Magnetron ◽  
Silicide Phase ◽  
Deposition Condition ◽  
Radio Frequency Magnetron Sputtering ◽  
Silicon Oxide Layer

The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 °C.

scholarly journals Influence of Annealing Temperature on the Characteristics of Ti-Codoped GZO Thin Solid Film

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Tao-Hsing Chen ◽  
Tzu-Yu Liao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

This study utilizes radio frequency magnetron sputtering (RF sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate and then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperatures are 300°C , 500°C, and 550°C, respectively. Ti:GZO transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency magnetron sputtering technique. The thin films are then annealed at temperatures of 300°C, 500°C, and 550°C, respectively, for rapid thermal annealing. The effects of the annealing temperature on the optical properties, resistivity, and nanomechanical properties of the Ti:GZO thin films are then systematically explored. The results show that all of the annealed films have excellent transparency (~90%) in the visible light range. Moreover, the resistivity of the Ti:GZO films reduces with an increasing annealing temperature, while the carrier concentration and Hall mobility both increase. Finally, the hardness and Young’s modulus of the Ti:GZO thin films are both found to increase as the annealing temperature is increased.

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