Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

2013 ◽  
Vol 528 ◽  
pp. 10-18
Author(s):  
Wen-Hung Lo ◽  
Ting-Chang Chang ◽  
Chih-Hao Dai ◽  
Wan-Lin Chung ◽  
Ching-En Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Floating Body ◽  
Body Effect ◽  
Floating Body Effect ◽  
P Type

Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

2004 ◽  
Vol 43 (4A) ◽  
pp. 1300-1304
Author(s):  
Tien-Sheng Chao ◽  
Yao-Jen Lee ◽  
Chun-Yang Huang ◽  
Horng-Chih Lin ◽  
Yiming Li ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Dynamic Threshold ◽  
Hot Carrier ◽  
P Type

Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

2010 ◽  
Vol 157 (6) ◽  
pp. H633 ◽  
Author(s):  
M. Kolahdouz ◽  
P. Tabib Zadeh Adibi ◽  
A. Afshar Farniya ◽  
S. Shayestehaminzadeh ◽  
E. Trybom ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Selective Growth ◽  
Oxide Semiconductor ◽  
P Type
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