floating body effects
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Persistent Floating‐Body Effects in Fully Depleted Silicon‐on‐Insulator Transistors

2020 ◽  
Vol 217 (9) ◽  
pp. 1900948 ◽  
Author(s):  
Hyungjin Park ◽  
Jean-Pierre Colinge ◽  
Sorin Cristoloveanu ◽  
Maryline Bawedin
Keyword(s):  
Silicon On Insulator ◽  
Floating Body ◽  
Fully Depleted ◽  
Floating Body Effects

Is FD-SOI immune to Floating Body Effects?

2018 ◽  
Author(s):  
Hyungjin Park ◽  
Kyunghwa Lee ◽  
Jean-Pierre Colinge ◽  
Sorin Cristoloveanu
Keyword(s):  
Floating Body ◽  
Floating Body Effects

scholarly journals Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

2018 ◽  
Vol 15 (4) ◽  
pp. 20171236-20171236
Author(s):  
Zhiyuan Hu ◽  
Lihua Dai ◽  
Zhengxuan Zhang ◽  
Xiaoyun Li ◽  
Shichang Zou
Keyword(s):  
Total Dose ◽  
Gate Oxide ◽  
Floating Body ◽  
Radiation Induced ◽  
Induced Changes ◽  
Dose Radiation ◽  
Floating Body Effects

scholarly journals Floating body effects in carbon doped GaN HEMTs

2015 ◽  
Author(s):  
Martin Kuball ◽  
Michael J. Uren ◽  
Alexander Pooth ◽  
Serge Karboyan ◽  
William M. Waller ◽  
...  
Keyword(s):  
Floating Body ◽  
Carbon Doped ◽  
Gan Hemts ◽  
Floating Body Effects

Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOS

2013 ◽  
Vol 34 (9) ◽  
pp. 094005
Author(s):  
Yongheng Jiang ◽  
Xiaorong Luo ◽  
Yanfei Li ◽  
Pei Wang ◽  
Ye Fan ◽  
...  
Keyword(s):  
Floating Body ◽  
Cmos Compatible ◽  
Floating Body Effects

From SOI 1T-DRAMs to Unified Memory Concepts

2012 ◽  
Vol 1430 ◽  
Author(s):  
Sorin Cristoloveanu ◽  
Maryline Bawedin
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Floating Body ◽  
Access Memory ◽  
Floating Body Effects

ABSTRACTThe typical architectures for single-transistor capacitorless dynamic random access memory (1T-DRAM) are reviewed. This memory takes advantage of floating-body effects in SOI-like devices. The principles of operation and the key mechanisms for memory programming and reading are described. Most of these devices can be enriched with non-volatile storage capability. Several possibilities for such ‘unified’ memory are explored.

Compact Modeling of Partially Depleted Silicon-on-Insulator Drain-Extended MOSFET (DEMOSFET) Including High-Voltage and Floating-Body Effects

2011 ◽  
Vol 58 (10) ◽  
pp. 3485-3493 ◽  
Author(s):  
Tarun Kumar Agarwal ◽  
Amit Ranjan Trivedi ◽  
Vaidyanathan Subramanian ◽  
M. Jagadesh Kumar
Keyword(s):  
High Voltage ◽  
Silicon On Insulator ◽  
Floating Body ◽  
Compact Modeling ◽  
Floating Body Effects
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