Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

Tien-Sheng Chao; Yao-Jen Lee; Chun-Yang Huang; Horng-Chih Lin; Yiming Li; Tiao-Yuan Huang

doi:10.1143/jjap.43.1300

Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1300 ◽

2004 ◽

Vol 43 (4A) ◽

pp. 1300-1304

Author(s):

Tien-Sheng Chao ◽

Yao-Jen Lee ◽

Chun-Yang Huang ◽

Horng-Chih Lin ◽

Yiming Li ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Hot Carrier ◽

P Type

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New Observations on Hot-Carrier Degradation in 0.1 µm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l502 ◽

2002 ◽

Vol 41 (Part 2, No. 5A) ◽

pp. L502-L504

Author(s):

Wen-Kuan Yeh ◽

Wen-Han Wang ◽

Yean-Kuen Fang ◽

Fu-Liang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Degradation

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Impact of the strained SiGe source/drain on hot carrier reliability for 45nm p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2904647 ◽

2008 ◽

Vol 92 (13) ◽

pp. 133504 ◽

Cited By ~ 8

Author(s):

C. Y. Cheng ◽

Y. K. Fang ◽

J. C. Hsieh ◽

H. Hsia ◽

W. M. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

P Type ◽

Strained Sige

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Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.041302 ◽

2010 ◽

Vol 49 (4) ◽

pp. 041302 ◽

Cited By ~ 1

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Mobility Degradation ◽

P Type

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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.09.087 ◽

2013 ◽

Vol 528 ◽

pp. 10-18

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Chih-Hao Dai ◽

Wan-Lin Chung ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

P Type

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Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c041 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C041

Author(s):

Sheng-Chun Wang ◽

Pin Su ◽

Kun-Ming Chen ◽

Sheng-Yi Huang ◽

Cheng-Chou Hung ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Small Signal

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Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.8739 ◽

2008 ◽

Vol 47 (12) ◽

pp. 8739-8742 ◽

Cited By ~ 4

Author(s):

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Hot Carrier Effect ◽

Wafer Direct Bonding

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Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3182792 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024511 ◽

Cited By ~ 9

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Ken Uchida

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

P Type

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Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.3832 ◽

2005 ◽

Vol 44 (6A) ◽

pp. 3832-3835 ◽

Cited By ~ 1

Author(s):

Kun-Ming Chen ◽

Hsin-Hui Hu ◽

Guo-Wei Huang ◽

Chun-Yen Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Hot Carrier

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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