Conducting Nb-doped TiO2 thin films fabricated with an atomic layer deposition technique

2014 ◽  
Vol 551 ◽  
pp. 19-22 ◽  
Author(s):  
Janne-Petteri Niemelä ◽  
Hisao Yamauchi ◽  
Maarit Karppinen
2014 ◽  
Vol 565 ◽  
pp. 19-24 ◽  
Author(s):  
Lauri Aarik ◽  
Tõnis Arroval ◽  
Raul Rammula ◽  
Hugo Mändar ◽  
Väino Sammelselg ◽  
...  

2008 ◽  
Vol 8 (2) ◽  
pp. 1003-1011
Author(s):  
Ola Nilsen ◽  
Steinar Foss ◽  
Arne Kjekshus ◽  
Helmer Fjellvåg

Needles of manganese(IV) oxide in the nanometer range have been synthesised using the atomic layer deposition technique. Traditionally the atomic layer deposition technique is used for the fabrication of thin films, however, we find that needles of β-MnO2 are formed when manganese(IV) oxide is deposited as relatively thick (ca. 800 nm) thin films on substrates of α-Al2O3 [(001) and (012) oriented]. There is no formation of needles when the film is deposited on substrates such as Si(100) or soda lime glass. The film is formed using Mn(thd)3 (Hthd = 2,2,6,6-tetramethylheptane-3,5-dione) and ozone as precursors. While thin films (ca. 100 nm) consist of ε′-MnO2,22, 23 the same process applied to thicker films results in the formation of nano-needles of β-MnO2. These needles of β-MnO2 have dimensions ranging from approximately 1.5 μm at the base down to very sharp tips. The nano-needles and the bulk of the films have been analysed by atomic force microscopy, scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.


2015 ◽  
Vol 10 (1) ◽  
pp. 38-42
Author(s):  
R. S. Pessoa ◽  
F. P. Pereira ◽  
G. E. Testoni ◽  
W. Chiappim ◽  
H. S. Maciel ◽  
...  

This paper discusses about the effect of substrate type on structure of titanium dioxide thin film deposited by atomic layer deposition technique using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100), cover glass and titanium, and the depositions were performed at temperatures ranging from 300ºC to 450 ºC. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase could be obtained in almost pure phase at temperature of 450 ºC, however only for glass and titanium substrates. For the case of silicon (100) substrate, the anatase phase was preponderant for process temperatures investigated.


Author(s):  
Dohyun Go ◽  
Jaehyeong Lee ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Wangu Kang ◽  
...  

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