Ti–Al–O nanocrystal charge trapping memory cells fabricated by atomic layer deposition

2014 ◽  
Vol 563 ◽  
pp. 6-9 ◽  
Author(s):  
Zheng-Yi Cao ◽  
Ai-Dong Li ◽  
Xin Li ◽  
Yan-Qiang Cao ◽  
Di Wu
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Memory Cells ◽  
Layer Deposition ◽  
Charge Trapping Memory

scholarly journals Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 075021 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
Fabrizio Roccaforte
Keyword(s):  
Atomic Layer Deposition ◽  
Negative Charge ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Al2o3 Films ◽  
Trapping Effects

scholarly journals The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

2016 ◽  
Vol 30 (15) ◽  
pp. 1650279 ◽  
Author(s):  
Jinqiu Liu ◽  
Jianxin Lu ◽  
Jiang Yin ◽  
Bo Xu ◽  
Yidong Xia ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Memory Devices ◽  
Layer Deposition ◽  
High K ◽  
Charge Trapping Memory ◽  
Deposition Techniques ◽  
Composite Charge

The charge-trapping memory devices namely Pt/Al2O3/(Al2O[Formula: see text](Cu2O)[Formula: see text]/SiO2/[Formula: see text]-Si with 2, 3 and 4 nm SiO2 tunneling layers were fabricated by using RF magnetron sputtering and atomic layer deposition techniques. At an applied voltage of ±11 V, the memory windows in the C–V curves of the memory devices with 2, 3 and 4 nm SiO2 tunneling layers were about 4.18, 9.91 and 11.33 V, respectively. The anomaly in memory properties among the three memory devices was ascribed to the different back tunneling probabilities of trapped electrons in the charge-trapping dielectric (Al2O[Formula: see text](Cu2O)[Formula: see text] due to the different thicknesses of SiO2 tunneling layer.

scholarly journals Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

2013 ◽  
Vol 8 (1) ◽  
Author(s):  
Peng Zhou ◽  
Li Ye ◽  
Qing Qing Sun ◽  
Peng Fei Wang ◽  
An Quan Jiang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Joule Heat ◽  
Layer Deposition

Charge-Trapping Characteristics of Al2O3/Cu/Al2O3 Nanolaminate Structures Prepared Through Atomic Layer Deposition

2011 ◽  
Vol 11 (7) ◽  
pp. 5887-5891
Author(s):  
Byung Kook Lee ◽  
Seok Hwan Kim ◽  
Bo Keun Park ◽  
Sun Sook Lee ◽  
Jin-Ha Hwang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Layer Deposition

Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories

2012 ◽  
Vol 68 ◽  
pp. 38-47 ◽  
Author(s):  
Nikolaos Nikolaou ◽  
Panagiotis Dimitrakis ◽  
Pascal Normand ◽  
Vassilios Ioannou-Sougleridis ◽  
Konstantinos Giannakopoulos ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

2017 ◽  
Vol 122 (24) ◽  
pp. 245302 ◽  
Author(s):  
Yunlong Li ◽  
Samuel Suhard ◽  
Stefaan Van Huylenbroeck ◽  
Johan Meersschaut ◽  
Els Van Besien ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Through Silicon Via ◽  
Voltage Shift ◽  
Interface Charge ◽  
Layer Deposition ◽  
Flatband Voltage
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