Effect of high temperature thermal treatment of (100) γ-LiAlO2 substrate on epitaxial growth of ZnO films by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 564 ◽  
pp. 156-159 ◽  
Author(s):  
S.S. Chen ◽  
X.H. Pan ◽  
P. Ding ◽  
H.H. Zhang ◽  
W. Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Thermal Treatment ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Zno Films

Growth and Decay of Germanium Islands on Silicon Studied by High Temperature Stm

1999 ◽  
Vol 583 ◽  
Author(s):  
M. Kästner ◽  
B. Voigtländer
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Scanning Tunneling Microscope ◽  
Strain Energy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscope

AbstractWe use a scanning tunneling microscope (STM) capable of imaging the growing layer at high temperature during molecular beam epitaxy (MBE) to study the epitaxial growth of Germanium on Silicon and the decay of Ge islands. The periodicity of the (2×N) reconstruction of two-dimensional Ge layers on Si(001) is measured as function of the Ge coverage. Strain energy drives the formation of the (2×N) reconstruction and Si/Ge intermixing. A comparison to total energy calculations predicting the periodicity of the (2×N) reconstruction is used to estimate the amount of Si-Ge intermixing near the surface. The evolution of the size and shape of individual “hut clusters” is measured and explained by kinetically self-limiting growth. The relaxation of kinetically a determined morphology towards equilibrium is followed for a Ge layer on Si(111). Strained two-dimensional as well as partially relaxed three-dimensional islands dissolve and are soaked up by larger three-dimensional islands which are dislocated and therefore fully relaxed.

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 241 (12) ◽  
pp. 2835-2838 ◽  
Author(s):  
O. H. Roh ◽  
Y. Tomita ◽  
M. Ohsugi ◽  
X. Wang ◽  
Y. Ishitani ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Intermediate Layers

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

Epitaxial growth of Dy2O3 films on SrTiO3(001) substrates by molecular beam epitaxy

2011 ◽  
Vol 29 (1) ◽  
pp. 01A801 ◽  
Author(s):  
Md. Nurul Kabir Bhuiyan ◽  
Mariela Menghini ◽  
Jean-Pierre Locquet ◽  
Jin Won Seo ◽  
Christel Dieker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films
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