UV protective zinc oxide coating for biaxially oriented polypropylene packaging film by atomic layer deposition

2014 ◽  
Vol 570 ◽  
pp. 33-37 ◽  
Author(s):  
Kimmo Lahtinen ◽  
Tommi Kääriäinen ◽  
Petri Johansson ◽  
Sami Kotkamo ◽  
Philipp Maydannik ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Oxide Coating ◽  
Atomic Layer ◽  
Packaging Film ◽  
Biaxially Oriented Polypropylene ◽  
Layer Deposition ◽  
Oriented Polypropylene

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

scholarly journals Kinetic Monte Carlo Study of the Atomic Layer Deposition of Zinc Oxide

2018 ◽  
Vol 122 (47) ◽  
pp. 27044-27058 ◽  
Author(s):  
Timo Weckman ◽  
Mahdi Shirazi ◽  
Simon D. Elliott ◽  
Kari Laasonen
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Study ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition

Characteristics of Zinc-Oxide-Sulfide-Mixed Films Deposited by Using Atomic Layer Deposition

2008 ◽  
Vol 53 (6) ◽  
pp. 3287-3295 ◽  
Author(s):  
Sunyeol Jeon ◽  
Seokhwan Bang ◽  
Seungjun Lee ◽  
Semyung Kwon ◽  
Wooho Jeong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Mixed Films

Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition

2009 ◽  
Vol 517 (15) ◽  
pp. 4355-4359 ◽  
Author(s):  
Lin Dong ◽  
Qing-Qing Sun ◽  
Yu Shi ◽  
Hao-Wen Guo ◽  
Han Liu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Reaction ◽  
Nitrogen Doped ◽  
Layer Deposition
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