Characterization of electronic structure of Cu 2 ZnSn(S x Se 1−x ) 4 absorber layer and CdS/Cu 2 ZnSn(S x Se 1−x ) 4 interfaces by in-situ photoemission and inverse photoemission spectroscopies

2015 ◽  
Vol 582 ◽  
pp. 166-170 ◽  
Author(s):  
Norio Terada ◽  
Sho Yoshimoto ◽  
Kosuke Chochi ◽  
Takayuki Fukuyama ◽  
Masahiro Mitsunaga ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Absorber Layer ◽  
Inverse Photoemission

Growth and Characterization of the Binary Defect Alloy Cu2-xSe and the Relation to II–VI/I–III–VI Heterojunction Formation

1995 ◽  
Vol 378 ◽  
Author(s):  
Art J. Nelson ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoemission Spectroscopy ◽  
Interfacial Chemistry ◽  
Valence Band Offset ◽  
Force Microscopy ◽  
Atomic Force ◽  
Valence Band Discontinuity

AbstractSynchrotron radiation soft x-ray photoemission spectroscopy was used to investigate the development of the electronic structure at the CdS/Cu2Se heterojunction interface. Cu2−xSe layers were deposited on GaAs (100) by molecular beam epitaxy from Cu2Se sources. Raman spectra reveal a strong peak at 270 cm−1, indicative of the Cu2−xSe phase. Atomic force microscopy reveals uniaxial growth in a preferred (100) orientation. CdS overlayers were then deposited in-situ, at room temperature, in steps on these epilayers. Photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Se3d and Cd4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the CdS/Cu2−xSe and heterojunction valence band discontinuity and the consequent heterojunction band diagram. These results are compared to the valence band offset (ΔEv) for the CdS/CuInSe2 heterojunction interface.

scholarly journals Electronic characterization of silicon intercalated chevron graphene nanoribbons on Au(111)

2018 ◽  
Vol 54 (13) ◽  
pp. 1619-1622 ◽  
Author(s):  
O. Deniz ◽  
C. Sánchez-Sánchez ◽  
R. Jaafar ◽  
N. Kharche ◽  
L. Liang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Graphene Nanoribbons

The intrinsic electronic structure of chevron graphene nanoribbons are revealed through in situ silicon intercalation.

PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF SIZE-SELECTED Ptn — CLUSTERS DEPOSITED ON Ag(110)

1993 ◽  
Vol 07 (01n03) ◽  
pp. 556-559 ◽  
Author(s):  
H.-V. ROY ◽  
J. BOSCHUNG ◽  
P. FAYET ◽  
F. PATTHEY ◽  
W.-D. SCHNEIDER
Keyword(s):  
Electronic Structure ◽  
Cluster Size ◽  
Crystal Surface ◽  
Bound State ◽  
In Situ Characterization ◽  
Theoretical Predictions ◽  
Photoemission Study ◽  
Energy Dependent

We report on a photoemission study (XPS, UPS) of the evolution of the electronic structure with cluster size of Pt n ( n = 1-10) clusters deposited on a Ag(110) single crystal surface. The clusters are produced by Xe-ion bombardment of a Pt target. The ionized clusters are mass-selected by a quadrupole mass spectrometer and guided to the substrate by an RF-mode only quadrupole. The substrate is in the center of the analysis chamber allowing in-situ characterization of the supported clusters. Photoemission spectra taken on submonolayer quantities of mass-selected monodispersed Pt clusters indicate individual discrete electronic structure features of the Pt 5d emission. In the atomic-like limit virtual bound state formation with different 5d3/2 and 5d5/2 line broadening is observed which points to an energy dependent Vsd hopping matrix element in agreement with theoretical predictions. With increasing cluster size the splitting between the bonding-like and antibonding-like Pt 5d states reflects the Pt-Pt interaction. The shift of the center of gravity of the Pt 5d state towards the Fermi energy and their concomittant broadening indicate the trend to Pt-metal formation.

In-situ characterization of doping-effect on electronic structure of epitaxial films of infinite layer SrCuO2

1996 ◽  
Vol 46 (S5) ◽  
pp. 2683-2684 ◽  
Author(s):  
N. Terada ◽  
A. Iyo ◽  
Y. Sekita ◽  
S. Ishibashi ◽  
H. Ihara
Keyword(s):  
Electronic Structure ◽  
Epitaxial Films ◽  
Doping Effect ◽  
In Situ Characterization ◽  
Infinite Layer

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

A very rapid in situ Kikuchi technique to determine relative crystal misorientation

1988 ◽  
Vol 46 ◽  
pp. 830-831
Author(s):  
J. I. Bennetch
Keyword(s):  
Electron Beam ◽  
Analytical Techniques ◽  
Superplastic Forming ◽  
The Other ◽  
Kikuchi Pattern ◽  
Kikuchi Line ◽  
Line Analysis

In a recent study of the superplastic forming (SPF) behavior of certain Al-Li-X alloys, the relative misorientation between adjacent (sub)grains proved to be an important parameter. It is well established that the most accurate way to determine misorientation across boundaries is by Kikuchi line analysis. However, the SPF study required the characterization of a large number of (sub)grains in each sample to be statistically meaningful, a very time-consuming task even for comparatively rapid Kikuchi analytical techniques.In order to circumvent this problem, an alternate, even more rapid in-situ Kikuchi technique was devised, eliminating the need for the developing of negatives and any subsequent measurements on photographic plates. All that is required is a double tilt low backlash goniometer capable of tilting ± 45° in one axis and ± 30° in the other axis. The procedure is as follows. While viewing the microscope screen, one merely tilts the specimen until a standard recognizable reference Kikuchi pattern is centered, making sure, at the same time, that the focused electron beam remains on the (sub)grain in question.

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